Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell von Rahaman, Sk. Ziaur, Wang, I-Jung, Chen, Tian-Yue, Pai, Chi-Feng, Wang, Ding-Yeong, Wei, Jeng-Hua, Lee, Hsin-Han, Hsin, Yu-Chen, Chang, Yao-Jen, Yang, Shan-Yi, Kuo, Yi-Ching, Su, Yi-Hui, Chen, Yu-Sheng, Huang, Keh-Ching, Wu, Chih-I, Deng, Duan-Li

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Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution von Rahaman Sk Ziaur, Heng-Yuan, Lee, Yu-Sheng, Chen, Yu-De, Lin, Pang-Shiu, Chen, Wei-Su, Chen, Pei-Hua, Wang

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Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics von Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung

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The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories von Rahaman, Sk. Ziaur, Lin, Yu-De, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Pang-Shiu, Chen, Wei-Su, Hsu, Chien-Hua, Tsai, Kan-Hsueh, Tsai, Ming-Jinn, Wang, Pei-Hua

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Process-induced magnetic tunnel junction damage and its recovery for the development of spin–orbit torque magnetic random access memory von Ziaur Rahaman, Sk, Chang, Yao-Jen, Hsin, Yu-Chen, Yang, Shan-Yi, Lee, Hsin-Han, Wang, I-Jung, Chen, Guan-Long, Su, Yi-Hui, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Deng, Duan-Li, Chang, Shih-Chieh

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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO x /AlO x /W Cross-Point von Banerjee, Writam, Rahaman, Sk. Ziaur, Maikap, Siddheswar

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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point von Banerjee, Writam, Rahaman, Sk. Ziaur, Maikap, Siddheswar

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Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity von Rahaman, Sk Ziaur, Wang, I-Jung, Wang, Ding-Yeong, Pai, Chi-Feng, Hsin, Yu-Chen, Yang, Shan-Yi, Lee, Hsin-Han, Chang, Yao-Jen, Kuo, Yi-Ching, Su, Yi-Hui, Chen, Guan-Long, Chen, Fang-Ming, Wei, Jeng-Hua, Hou, Tuo-Hung, Sheu, Shyh-Shyuan, Wu, Chih-I, Deng, Duan-Lee

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Scalability and reliability issues of Ti/HfO x -based 1T1R bipolar RRAM: Occurrence, mitigation, and solution von Rahaman, Sk. Ziaur, Lee, Heng-Yuan, Chen, Yu-Sheng, Lin, Yu-De, Chen, Pang-Shiu, Chen, Wei-Su, Wang, Pei-Hua

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Retention Model of TaO/HfOx and TaO/AlOx RRAM with Self-Rectifying Switch Characteristics von Lin, Yu-De, Chen, Pang-Shiu, Lee, Heng-Yuan, Chen, Yu-Sheng, Rahaman, Sk. Ziaur, Tsai, Kan-Hsueh, Hsu, Chien-Hua, Chen, Wei-Su, Wang, Pei-Hua, King, Ya-Chin, Lin, Chrong Jung

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Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrO x /AlO x /W Cross-Point von Banerjee, Writam, Rahaman, Sk. Ziaur, Maikap, Siddheswar

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Retention Model of TaO/HfO^sub x^ and TaO/AlO^sub x^ RRAM with Self-Rectifying Switch Characteristics von Lin, Yu-de, Chen, Pang-shiu, Lee, Heng-yuan, Chen, Yu-sheng, Rahaman, Sk Ziaur, Tsai, Kan-hsueh, Hsu, Chien-hua, Chen, Wei-su, Wang, Pei-hua, King, Ya-chin, Lin, Chrong Jung

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