Mechanism of novel defect multiplication impacting high power 4H-SiC devices von Mahadik, N.A., Dudley, M., Raghothamachar, B., Chen, Z., Stahlbush, R.E., Hinojosa, M., Lelis, A., Sung, W.

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Seeded growth of AlN bulk crystals in m- and c-orientation von Lu, P., Collazo, R., Dalmau, R.F., Durkaya, G., Dietz, N., Raghothamachar, B., Dudley, M., Sitar, Z.

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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment von Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.

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Homoepitaxial HVPE GaN: A potential substrate for high performance devices von Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Tadjer, M.J., Wu, S., Raghothamachar, B., Dudley, M., Sochacki, T., Bockowski, M.

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Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC von Dudley, M., Wu, F., Wang, H., Byrappa, S., Raghothamachar, B., Choi, G., Sun, S., Sanchez, E. K., Hansen, D., Drachev, R., Mueller, S. G., Loboda, M. J.

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Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications von Müller, St.G., Sanchez, E.K., Hansen, D.M., Drachev, R.D., Chung, G., Thomas, B., Zhang, J., Loboda, M.J., Dudley, M., Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Choi, G.

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Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC von Wang, H., Dudley, M., Wu, F., Yang, Y., Raghothamachar, B., Zhang, J., Chung, G., Thomas, B., Sanchez, E.K., Mueller, S.G., Hansen, D., Loboda, M.J.

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Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC von Wang, H., Wu, F., Byrappa, S., Sun, S., Raghothamachar, B., Dudley, M., Sanchez, E. K., Hansen, D., Drachev, R., Mueller, S. G., Loboda, M. J.

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Correlations Between Crystal Defects and Performance of CdZnTe Detectors von Bolotnikov, A. E., Babalola, S., Camarda, G. S., Cui, Y., Gul, R., Egarievwe, S. U., Fochuk, P. M., Fuerstnau, M., Horace, J., Hossain, A., Jones, F., Kim, K. H., Kopach, O. V., McCall, B., Marchini, L., Raghothamachar, B., Taggart, R., Yang, G., Xu, L., James, R. B.

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Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC von Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Dudley, M., Wu, P., Zwieback, I., Souzis, A., Ruland, G., Anderson, T.

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Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes von Wang, Y., Ali, G. N., Mikhov, M. K., Vaidyanathan, V., Skromme, B. J., Raghothamachar, B., Dudley, M.

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Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique von Woodworth, A.A., Neudeck, P.G., Sayir, A., Solá, F., Dudley, M., Raghothamachar, B.

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'Star-like' defects in Cd-annealed CdZnTe crystals-an experimental study of their origin and formation mechanism von Yang, G., Bolotnikov, A. E., Fochuk, P. M., Cui, Y., Camarda, G. S., Hossain, A., Kim, K. H., Raghothamachar, B., Roy, U., James, R. B.

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Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC von Dudley, Michael, Sanchez, Edward, Mueller, Stephan G., Wu, F., Drachev, Roman, Hansen, Darren M., Wang, Huan Huan, Raghothamachar, Balaji, Byrapa, Sha Yan, Loboda, Mark J.

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Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules von Noveski, V., Schlesser, R., Raghothamachar, B., Dudley, M., Mahajan, S., Beaudoin, S., Sitar, Z.

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(Invited) Ultrawide Bandgap β-Ga2O3 Thin Films: Growths, Properties and Devices von Rafique, Subrina, Han, Lu, Zhao, Hongping

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X-ray characterization of bulk AIN single crystals grown by the sublimation technique von Raghothamachar, B., Dudley, M., Rojo, J.C., Morgan, K., Schowalter, L.J.

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Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy von Dudley, Michael, Sanchez, Edward, Raghothamachar, Balaji, Zhang, Ning, Zhang, Yu

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(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates von Dalmau, Rafael, Moody, Baxter

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N- and P- type Doping in Al-rich AlGaN and AlN von Sarkar, Biplab, Washiyama, Shun, Breckenridge, M. Hayden, Klump, Andrew, Baker, Jonathon N., Reddy, Pramod, Tweedie, James, Mita, Seiji, Kirste, Ronny, Irving, Doug L., Collazo, Ramon, Sitar, Zlatko

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