Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All 'Room Temperature' Ion Implantations von Mancini, Stephen A., Jang, Seung Yup, Chen, Zeyu, Kim, Dongyoung, Bialy, Alex, Raghotamacher, Balaji, Dudley, Michael, Mahadik, Nadeemullah, Stahlbush, Robert, Al-Jassim, Mowafak, Sung, Woongje

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