OLED manufacturing for large area lighting applications von Eritt, M., May, C., Leo, K., Toerker, M., Radehaus, C.

Volltext

Switching behavior of plasma polymer films containing silver nanoparticles von Kiesow, A., Morris, J. E., Radehaus, C., Heilmann, A.

Volltext

Density functional study of the adsorption of aspirin on the hydroxylated (0 0 1) α -quartz surface von Abbasi, A., Nadimi, E., Plänitz, P., Radehaus, C.

Volltext

Adsorption mechanisms of fluorocarbon polymers at ultra low- k surfaces von Leitsmann, R., Böhm, O., Plänitz, Ph, Radehaus, C., Schaller, M., Schreiber, M.

Volltext

Density functional study of the adsorption of aspirin on the hydroxylated (001) -quartz surface von Abbasi, A., Nadimi, E., Plänitz, P., Radehaus, C.

Volltext

Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures von Nakhmedov, E. P., Wieczorek, K., Burghardt, H., Radehaus, C.

Volltext

Tunneling Effective Mass of Electrons in Lightly N-Doped \hbox \hbox Gate Insulators von Nadimi, E., Golz, C., Trentzsch, M., Herrmann, L., Wieczorek, K., Radehaus, C.

Volltext

Study of direct tunneling current oscillations in ultrathin gate dielectrics von Nakhmedov, E. P., Radehaus, C., Wieczorek, K.

Volltext

Small-size silicon-oxynitride AWG demultiplexer operating around 725 nm von Schauwecker, B., Przyrembel, G., Kuhlow, B., Radehaus, C.

Volltext

Boron-Silicon complex defects in GaAs: An ab initio study von Leitsmann, R., Chicker, F., Plänitz, Ph, Radehaus, C., Kretzer, U., Scheffer-Czygan, M., Eichler, S.

Volltext

Single and Multiple Oxygen Vacancies in Ultrathin hbox SiO 2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Planitz, P, Ottking, R, Schreiber, M, Radehaus, C

Volltext

Single and Multiple Oxygen Vacancies in Ultrathin [Formula Omitted] Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Planitz, P, Ottking, R, Schreiber, M, Radehaus, C

Volltext

First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs von Nadimi, E., Planitz, P., Ottking, R., Wieczorek, K., Radehaus, C.

Volltext

Single and Multiple Oxygen Vacancies in Ultrathin \hbox Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation von Nadimi, E, Plänitz, P, Öttking, R, Schreiber, M, Radehaus, C

Volltext

Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary von Nadimi, E., Radehaus, C., Nakhmedov, E. P., Wieczorek, K.

Volltext

Tunneling Effective Mass of Electrons in Lightly N-Doped [Formula Omitted] Gate Insulators von Nadimi, E, Golz, C, Trentzsch, M, Herrmann, L, Wieczorek, K, Radehaus, C

Volltext

Dissolution of CF-Polymer Films at Ultra Low-k Surfaces Using Diluted HF von Leitsmann, R., Böhm, O., Plänitz, Ph, Radehaus, C., Schaller, M., Schreiber, M.

Volltext

Quantum-mechanical study of the direct tunneling currentin metal-oxide-semiconductor structures von Nakhmedov, E. P., Wieczorek, K., Burghardt, H., Radehaus, C.

Volltext

Image transcription between arrays of N-p-n-P optoelectronic switches von Heremans, P., Kuijk, M., Vounckx, R.A., Radehaus, C.V., Pankove, J.I., Borghs, G.

Volltext

Maximum detection with a two-dimensional optoelectronic p-n-p-n winner-take-all network von Radehaus, C V, Pankove, J I, Kuijk, M, Heremans, P, Borghs, G

Volltext