SiGe BiCMOS technology for RF circuit applications von Racanelli, M., Kempf, P.

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Device and technology evolution for Si-based RF integrated circuits von Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.-E., Racanelli, M., Shichijo, H., Weitzel, C.E., Bin Zhao

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A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation von Pingxi Ma, Racanelli, M., Jie Zheng, Knight, M.

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Specialty Foundry technology and design enablement for RF, high performance analog, and power von Chaudhry, S, Racanelli, M

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A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and... von Rotella, F., Bhattacharya, B.K., Blaschke, V., Matloubian, M., Brotman, A., Yuhua Cheng, Divecha, R., Howard, D., Lampaert, K., Miliozzi, P., Racanelli, M., Singh, P., Zampardi, P.J.

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Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs von Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Racanelli, M.

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Simulations of non-uniform, nonlinear collector doping profiles for SiGe HBTs von Preisler, E J, Cai, W, Zheng, J, Kalburge, A, Racanelli, M

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T-cell regulation by CD4 regulatory T cells during hepatitis B and C virus infections: facts and controversies von Manigold, Tobias, Dr, Racanelli, Vito, MD

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Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices von Shin, H.C., Ik-Sung Lim, Racanelli, M., Wen-Ling Margaret Huang, Foerstner, J., Bor-Yuan Hwang

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Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2 von RACANELLI, M, GREVE, D. W

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Evaluation of Albumin Kinetics in Critically Ill Patients With Coronavirus Disease 2019 Compared to Those With Sepsis-Induced Acute Respiratory Distress Syndrome von Su, Chang, Hoffman, Katherine L, Xu, Zhenxing, Sanchez, Elizabeth, Siempos, Ilias I, Harrington, John S, Racanelli, Alexandra C, Plataki, Maria, Wang, Fei, Schenck, Edward J

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Measurement of carrier generation lifetime in SOI devices von Shin, Hyungcheol, Racanelli, M., Huang, W.M., Foerstner, J., Hwang, Taekeun, Schroder, D.K.

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Impact of ballast resistor implementations on power performance of SiGe power HBTs von Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Reddy, V., Racanelli, M.

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A simple technique to measure generation lifetime in partially depleted SOI MOSFETs von Hyungcheol Shin, Racanelli, M., Huang, W.M., Foerstner, J., Seokjin Choi, Schroder, D.K.

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A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing von Preisler, E., Talor, G., Howard, D., Yan, Z., Booth, R., Zheng, J., Chaudhry, S., Racanelli, M.

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Growth rate of doped and undoped silicon by ultra-high vacuum chemical vapor deposition von GREVE, D. W, RACANELLI, M

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TFSOI complementary BiCMOS technology for low power applications von Huang, W.-L.M., Klein, K.M., Grimaldi, M., Racanelli, M., Ramaswami, S., Tsao, J., Foerstner, J., Hwang, B.-Y.C.

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Adaptability of a 280 GHz SiGe BiCMOS Process for High Frequency Commercial Applications von Preisler, E., Zheng, J., Chaudhry, S., Yan, Z., Booth, R., Qamar, M., Racanelli, M.

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High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor von Hong, M., de Fresart, E., Steele, J., Zlotnicka, A., Stein, C., Tam, G., Racanelli, M., Knoch, L., See, Y.-C., Evans, K.

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Alternate surface cleaning approaches for ultra high vacuum chemical vapor deposition epitaxy of Si and GexSi1-x von RACANELLI, M, GREVE, D. W, HATALIS, M. K, VAN YZENDOORN, L. J

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