Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 von Ivanov, S V, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Yagovkina, M A, Rzheutskii, N V, Lutsenko, E V, Jmerik, V N

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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow - green spectral region von Lutsenko, E.V., Voinilovich, A.G., Rzheutskii, N.V., Pavlovskii, V.N., Yablonskii, G.P., Sorokin, S.V., Gronin, S.V., Sedova, I.V., Kop'ev, P.S., Ivanov, S.V., Alanzi, M., Hamidalddin, A., Alyamani, A.

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique von Jmerik, V.N., Shubina, T.V., Mizerov, A.M., Belyaev, K.G., Sakharov, A.V., Zamoryanskaya, M.V., Sitnikova, A.A., Davydov, V.Yu, Kop’ev, P.S., Lutsenko, E.V., Rzheutskii, N.V., Danilchik, A.V., Yablonskii, G.P., Ivanov, S.V.

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Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates von Lutsenko, E. V., Rzheutskii, N. V., Pavlovskii, V. N., Yablonskii, G. P., Nechaev, D. V., Sitnikova, A. A., Ratnikov, V. V., Kuznetsova, Ya. V., Zhmerik, V. N., Ivanov, S. V.

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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE von Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Osipov, K. A., Rzheutskii, N. V., Zubialevich, V. Z., Gurskii, A. L., Yablonskii, G. P., Malinauskas, T., Jarašiūnas, K., Kazlauskas, K., Juršėnas, S., Miasojedovas, S., Žukauskas, A., Dikme, Y., Kalisch, H., Jansen, R. H., Schineller, B., Heuken, M.

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AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy von Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Sakharov, A. V., Sitnikova, A. A., Kop’ev, P. S., Ivanov, S. V., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P.

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire von Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Kop'ev, P. S., Ivanov, S. V., Lutsenko, E. V., Tarasuk, N. P., Rzheutskii, N. V., Yablonskii, G. P.

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Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al 2 O 3 von Ivanov, S V, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Yagovkina, M A, Rzheutskii, N V, Lutsenko, E V, Jmerik, V N

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Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter von Kuznetsova, N. V., Nechaev, D. V., Shmidt, N. M., Karpov, S. Yu, Rzheutskii, N. V., Zemlyakov, V. E., Kaibyshev, V. Kh, Kazantsev, D. Yu, Troshkov, S. I., Egorkin, V. I., Ber, B. Ya, Lutsenko, E. V., Ivanov, S. V., Jmerik, V. N.

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Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter von Kuznetsova, N. V., Nechaev, D. V., Shmidt, N. M., Karpov, S. Yu, Rzheutskii, N. V., Zemlyakov, V. E., Kaibyshev, V. Kh, Kazantsev, D. Yu, Troshkov, S. I., Egorkin, V. I., Ber, B. Ya, Lutsenko, E. V., Ivanov, S. V., Jmerik, V. N.

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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 von Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Toropov, A. A., Belyaev, K. G., Sitnikova, A. A., Yagovkina, M. A., Kop'ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Monemar, B., Ivanov, S. V.

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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al 2 O 3 von Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Toropov, A. A., Belyaev, K. G., Sitnikova, A. A., Yagovkina, M. A., Kop'ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Monemar, B., Ivanov, S. V.

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Optically pumped lasing at 300.4 nm applications and materials science in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3 von JMERIK, V. N, MIZEROV, A. M, RZHEUTSKII, N. V, YABLONSKII, G. P, MONEMAR, B, IVANOV, S. V, SHUBINA, T. V, TOROPOV, A. A, BELYAEV, K. G, SITNIKOVA, A. A, YAGOVKINA, M. A, KOP'EV, P. S, LUTSENKO, E. V, DANILCHYK, A. V

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique von JMERIK, V. N, SHUBINA, T. V, RZHEUTSKII, N. V, DANILCHIK, A. V, YABLONSKII, G. P, IVANOV, S. V, MIZEROV, A. M, BELYAEV, K. G, SAKHAROV, A. V, ZAMORYANSKAYA, M. V, SITNIKOVA, A. A, DAVYDOV, V. Yu, KOP'EV, P. S, LUTSENKO, E. V

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