Abnormal growth of LPCVD SiO2 on CoSi2 by high dose As implantation von IHL HYUN CHO, NAK KYUN SUNG, HYUN SUK SHIM, RYU, Hyuk-Hyun, JAE HEE HA, WON GYU LEE

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Growth Temperature Effect of MBE-Seed Layers on Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method von Leem, Jae-Young, Choi, Hyun Young, Kim, Min Su, Cho, Min Young, Kim, Ghun Sik, Jeon, Su Min, Kim, Do Yeob, Han, Young-Jae, Ryu, Hyuk Hyun, Lee, Dong-Yul, Kim, Jin Soo, Kim, Jong Su, Son, Jeong-Sik, Lee, Joo In

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High-performance and low-cost 0.15- mu m nMOSFETs using simultaneous N-gate and source/drain doping process von Cha, Han-Seob, Lee, Won-Gyu, Heo, Sang-Bum, Ryu, Hyuk-Hyun, Lee, Jong-Gon, Lee, Jeong-Gun, Lee, Hi-Deok

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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET von Jung, Soon-Yen, Kim, Yong-Jin, Lee, Won-Jae, Zhang, Ying-Ying, Zhong, Zhun, Li, Shi-Guang, Kang, In-Ho, Lee, Ga-Won, Wang, Jin-Suk, Lee, Hi-Deok, Kim, Yeong-Cheol, Kim, Ji-Young, Ryu, Hyuk Hyun

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Abnormal silicon oxide growth on cobalt silicide in arsenic-doped N+ active areas von Lee, Won Gyu, Sung, Nak Kyun, Cho, Ihl Hyun, Ryu, Hyuk Hyun

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Void formation during silicidation and its influence on the thermal stability of cobalt silicide von Kim, Nam-Sik, Cha, Han-Seob, Sung, Nag-Kyun, Ryu, Hyuk-Hyun, Youn, Ki-Seog, Lee, Won-Gyu

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Shallow Trench Isolation Top Corner Rounding Using Si Soft Etching Following Diluted Hydrofluorine Solution von Mun, Seong Yeol, Shin, Kyeong Cheol, Yoon, Ki Chae, Kwak, Jong Seok, Ryu, Hyuk Hyun, Jeong, Yang Hee

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Effects of Growth Temperature of MBE-seed Layers on the Structural and Optical Properties of ZnO Thin Films Prepared by Using the Sol-gel Method von 최현영, 김민수, 김진수, 김종수, 손정식, 이주인, 조민영, 김건식, 전수민, Gug Yim, 김도엽, 류혁현, 임재영, 이동율

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NANOSTRUCTURE FORMATION DEVICE USING MICROWAVES von RYU, HYUK HYUN

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Abnormal growth of LPCVD SiO 2 on CoSi 2 by high dose As implantation von Cho, Ihl Hyun, Sung, Nak Kyun, Shim, Hyun Suk, Ryu, Hyuk-Hyun, Ha, Jae Hee, Lee, Won Gyu

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SOLUTION PROCESS CONCENTRATION CONTROL SYSTEM von RYU, Hyuk Hyun, BAE, Seong Chan

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High-performance and low-cost 0.15-mum nMOSFETs using simultaneous N-gate and source/drain doping process von Cha, Han-Seob, Lee, Won-Gyu, Heo, Sang-Bum, Ryu, Hyuk-Hyun, Lee, Jong-Gon, Lee, Jeong-Gun, Lee, Hi-Deok

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High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process von Cha, Han-Seob, Lee, Won-Gyu, Heo, Sang-Bum, Ryu, Hyuk-Hyun, Lee, Jong-Gon, Lee, Jeong-Gun, Lee, Hi-Deok

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High-performance and low-cost 0.15-/spl mu/m nMOSFETs using simultaneous N-gate and source/drain doping process von Han-Seob Cha, Won-Gyu Lee, Sang-Bum Heo, Hyuk-Hyun Ryu, Jong-Gon Lee, Jeong-Gun Lee, Hi-Deok Lee

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Effect of Gate Electrode Structure on Gate Oxide Integrity von Ryu, Hyuk-Hyun, Cha, Han-Seob, Lee, Jeong-Gun

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NANOSTRUCTURE FORMING DEVICE BY USING MICROWAVE von RYU, HYUK HYUN

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NANOSTRUCTURE FORMATION DEVICE USING MICROWAVES von RYU, Hyuk Hyun

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Method for preparing nanostructure by electrochemical deposition, and nanostructure prepared thereby von Ryu Hyuk Hyun, Jang Jin Tak, Kim Tae Gyoum

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Electrochemical deposition system and Electrochemical deposition system using the same von RYU HYUK HYUN, HONG YAE JIN

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METHOD FOR PREPARING NANOSTRUCTURE BY ELECTROCHEMICAL DEPOSITION, AND NANOSTRUCTURE PREPARED THEREBY von KIM TAE GYOUM, RYU HYUK HYUN, JANG JIN TAK

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