Induction Range von JEONG CHEOL HUN, RYOU, JAE HEE

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RICE COOKER FOR HEATING A POT UNIFORMLY von RYOU, JAE HEE, JUNG, YEAN GA

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A GAS BURNER FOR AUTOMATIC IGNITION von RYOU, JAE HEE

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Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes von Xu, Sheng, Xu, Chen, Liu, Ying, Hu, Youfan, Yang, Rusen, Yang, Qing, Ryou, Jae-Hyun, Kim, Hee Jin, Lochner, Zachary, Choi, Suk, Dupuis, Russell, Wang, Zhong Lin

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers von Choi, Suk, Ji, Mi-Hee, Kim, Jeomoh, Jin Kim, Hee, Satter, Md. M., Yoder, P. D., Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells von Jae-Hyun Ryou, Yoder, P.D., Jianping Liu, Lochner, Z., Hyunsoo Kim, Suk Choi, Hee Jin Kim, Dupuis, R.D.

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Deficits in color detection in patients with Alzheimer disease von Kim, Hee Jin, Ryou, Jae Hyun, Choi, Kang Ta, Kim, Sun Mi, Kim, Jee Taek, Han, Doug Hyun

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AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10 von Jeomoh Kim, Mi-Hee Ji, Detchprohm, Theeradetch, Jae-Hyun Ryou, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K.

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Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions von Kim, Jeomoh, Lochner, Zachary, Ji, Mi-Hee, Choi, Suk, Kim, Hee Jin, Kim, Jin Soo, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

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Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape von Shervin, Shahab, Moradnia, Mina, Alam, Md Kamrul, Tong, Tain, Ji, Mi-Hee, Chen, Jie, Pouladi, Sara, Detchprohm, Theeradetch, Forrest, Rebecca, Bao, Jiming, Dupuis, Russell D, Ryou, Jae-Hyun

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High-Performance Color-Converted Full-Color Micro-LED Arrays von Kim, Won Hee, Jang, Young Jae, Kim, Ja-Yeon, Han, Myungsoo, Kang, MinJae, Yang, Kiyong, Ryou, Jae-Hyun, Kwon, Min-Ki

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Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer von Choi, Suk, Kim, Hee Jin, Kim, Seong-Soo, Liu, Jianping, Kim, Jeomoh, Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes von Kim, Hee Jin, Choi, Suk, Kim, Seong-Soo, Ryou, Jae-Hyun, Yoder, P. Douglas, Dupuis, Russell D., Fischer, Alec M., Sun, Kewei, Ponce, Fernando A.

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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating von Choi, Suk, Jin Kim, Hee, Lochner, Zachary, Kim, Jeomoh, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

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Enhanced microstructural stability of γ/γ′-strengthened Co-Ti-Mo-based alloys through Al additions von Im, Hye Ji, Choi, Won Seok, Ryou, KenHee, Seol, Jae Bok, Kang, Tae Hyeok, Ko, Won-Seok, Choi, Pyuck-Pa

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Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Ryou, Jae-Hyun, Sood, Ashok K., Dhar, Nibir D., Lewis, Jay

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Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition von Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A., Ryou, Jae-Hyun

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Low-noise GaN ultraviolet p - i - n photodiodes on GaN substrates von Zhang, Yun, Shen, Shyh-Chiang, Kim, Hee Jin, Choi, Suk, Ryou, Jae-Hyun, Dupuis, Russell D., Narayan, Bravishma

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Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers von Satter, M. M., Hee-Jin Kim, Lochner, Z., Jae-Hyun Ryou, Shyh-Chiang Shen, Dupuis, R. D., Yoder, P. D.

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Radiative recombination in GaN/InGaN heterojunction bipolar transistors von Kao, Tsung-Ting, Lee, Yi-Che, Kim, Hee-Jin, Ryou, Jae-Hyun, Kim, Jeomoh, Detchprohm, Theeradetch, Dupuis, Russell D., Shen, Shyh-Chiang

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