Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries von Farahmand, M., Garetto, C., Bellotti, E., Brennan, K.F., Goano, M., Ghillino, E., Ghione, G., Albrecht, J.D., Ruden, P.P.

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AlGaN/GaN heterostructure field-effect transistor model including thermal effects von Albrecht, J.D., Ruden, P.P., Binari, S.C., Ancona, M.G.

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Monte Carlo simulation of noncubic symmetry semiconducting materials and devices von Brennan, K.F., Bellotti, E., Farahmand, M., Nilsson, H.-E., Ruden, P.P., Yumin Zhang

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Macroscopic modeling of spin injection and spin transport in organic semiconductors von Yunus, M., Ruden, P.P., Smith, D.L.

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Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN von Kolnı́k, Ján, Oğuzman, İsmail H., Brennan, Kevin F., Wang, Rongping, Ruden, P. Paul

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Low- and high-field transport studies for semiconducting carbon nanotubes von Kauser, M.Z., Verma, A., Ruden, P.P.

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Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC von Bellotti, Enrico, Nilsson, Hans-Erik, Brennan, Kevin F., Ruden, P. Paul, Trew, Robert

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1.3-/spl mu/m polarization-insensitive optical amplifier structure based on coupled quantum wells von Yumin Zhang, Ruden, P.P.

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Ensemble Monte Carlo calculation of hole transport in bulk 3C–SiC von Bellotti, Enrico, Nilsson, Hans-Erik, Brennan, Kevin F., Ruden, P. Paul

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Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors von Ruden, P.P., Shur, M., Akinwande, A.I., Jenkins, P.

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Theoretical study of a potential low-noise semimetal-based avalanche photodetector von Yang Wang, Mansour, N., Salem, A., Brennan, K.F., Ruden, P.P.

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Investigation of luminescence and non-linear optical properties of hetero n-i-p-i superlattices von Dohler, Gottfried H., Miller, J.N., Street, R.A., Ruden, P.P.

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A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode von Ruden, P.P., Krishnankutty, S.

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DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE von WANG, R., RUDEN, P.P., KOLNIK, J., OGUZMAN, I., BRENNAN, KF

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1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells von YUMIN ZHANG, RUDEN, P. P

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Modeling of band-to-band tunneling transitions during drift in Monte Carlo transport simulations von Ruden, P. Paul, Bellotti, Enrico, Nilsson, Hans-Erik, Brennan, Kevin F.

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Acousto-optic modulation of III-V semiconductor multiple quantum wells von Smith, DL, Kogan, SM, Ruden, PP, Mailhiot, C

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GaN-based micro pressure sensor for extreme environments von Son, K.A., Liu, Y., Ruden, P.P., Xic, J., Biyikli, N., Moon, Y.T., Onojima, N., Morkoc, H.

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Resonant tunneling in (001)- and (111)-oriented III–V double-barrier heterostructures under transverse and longitudinal stresses von Albrecht, J. D., Cong, L., Ruden, P. P., Nathan, M. I., Smith, D. L.

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Heterostructure FET model including gate leakage von Ruden, P.P.

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