Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC von Rozen, John, Dhar, Sarit, Zvanut, M. E., Williams, J. R., Feldman, L. C.

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Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs von Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.

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Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H–SiC surface von Rozen, John, Nagano, Masahiro, Tsuchida, Hidekazu

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Two-dimensional current percolation in nanocrystalline vanadiumdioxide films von Rozen, John, Lopez, René, Haglund, Richard F., Feldman, Leonard C.

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Neural Network Training With Asymmetric Crosspoint Elements von Onen, Murat, Gokmen, Tayfun, Todorov, Teodor K, Nowicki, Tomasz, Del Alamo, Jesús A, Rozen, John, Haensch, Wilfried, Kim, Seyoung

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Pressure dependence of SiO2 growth kinetics and electrical properties on SiC von Ray, E. A., Rozen, John, Dhar, Sarit, Feldman, L. C., Williams, J. R.

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices von Zhu, Xingguang, Ahyi, Ayayi C., Li, Mingyu, Chen, Zengjun, Rozen, John, Feldman, Leonard C., Williams, John R.

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Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC von Rozen, John, Dhar, Sarit, Pantelides, S. T., Feldman, L. C., Wang, Sanwu, Williams, J. R., Afanas’ev, V. V.

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Opportunities of in situ TEM for measuring voltage-driven microstructural changes in memristive devices von Ross, Frances, Wang, Baoming, Todorov, Teodor, Rozen, John

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Fundamentals, impedance, and performance of solid-state Li-metal microbatteries von Collins, John, de Souza, Joel P., Lee, Yun Seog, Pacquette, Adele, Papalia, John M., Bishop, Douglas M., Todorov, Teodor, Krishnan, Mahadevaiyer, Joseph, Eric, Rozen, John, Sadana, Devendra

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Two-dimensional current percolation in nanocrystalline vanadium dioxide films von Rozen, John, Lopez, René, Haglund, Richard F., Feldman, Leonard C.

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Total Dose Radiation Response of Nitrided and Non-nitrided SiO /4H-SiC MOS Capacitors von Dixit, S.K., Dhar, S., Rozen, J., Sanwu Wang, Schrimpf, R.D., Fleetwood, D.M., Pantelides, S.T., Williams, John.R., Feldman, L.C.

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Evolution of interfacial Fermi level in In{sub 0.53}Ga{sub 0.47}As/high-κ/TiN gate stacks von Carr, Adra, Rozen, John, Frank, Martin M., Ando, Takashi, Cartier, Eduard A., Kerber, Pranita, Narayanan, Vijay, Haight, Richard

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Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface von Rozen, John, Dhar, Sarit, Dixit, S. K., Afanas’ev, V. V., Roberts, F. O., Dang, H. L., Wang, Sanwu, Pantelides, S. T., Williams, J. R., Feldman, L. C.

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Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors von Taillon, Joshua A., Hyuk Yang, Joon, Ahyi, Claude A., Rozen, John, Williams, John R., Feldman, Leonard C., Zheleva, Tsvetanka S., Lelis, Aivars J., Salamanca-Riba, Lourdes G.

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Improved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC Surfaces von Tsuchida, Hidekazu, Rozen, John, Nagano, Masahiro

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Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks von Carr, Adra, Rozen, John, Frank, Martin M., Ando, Takashi, Cartier, Eduard A., Kerber, Pranita, Narayanan, Vijay, Haight, Richard

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SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE von Rozen, John

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