Properties of epitaxial GaN on refractory metal substrates von Freitas, Jaime A., Rowland, Larry B., Kim, Jihyun, Fatemi, Mohammad

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Defects limiting performance of devices fabricated on GaN/metal heterostructure von Maximenko, Serguei I., Freitas, Jaime A., Mittereder, Jeffrey A., Rowland, Larry B., Kim, Jihyun

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SiC materials-progress, status, and potential roadblocks von Powell, A.R., Rowland, L.B.

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Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering von Spanier, Jonathan E., Dunne, Greg T., Rowland, Larry B., Herman, Irving P.

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1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation von Banerjee, Sujit, Chatty, Kiran, Matocha, Kevin, Rowland, Larry B.

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1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation von Matocha, Kevin, Chatty, Kiran, Banerjee, Sujit, Rowland, Larry B

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Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes von Xiangyi Guo, Rowland, L.B., Dunne, G.T., Fronheiser, J.A., Sandvik, P.M., Beck, A.L., Campbell, J.C.

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Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors von Agarwal, A.K., Seshadri, S., Rowland, L.B.

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SiC materials-progress, status, and potential roadblocks: Special Issue on Wide Bandgap Semiconductor Devices von POWELL, Adrian R, ROWLAND, Larry B

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Electronic Properties of GaN Films Grown on TiC Substrates von Freitas, Jaime A., Rowland, Larry B.

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METHODS FOR SEED PLANTING AND SELECTION von SCHWOEGLER VANESSA L, ROWLAND LARRY B

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Cubic silicon carbide avalanche photodiodes von Rowland, L.B., Wyatt, J.L., Bishop, S.M.

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME von ELASSER AHMED, ROWLAND LARRY B

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Semiconductor devices and methods of making same von ELASSER AHMED, ROWLAND LARRY B

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Crystalline III-V nitride films on refractory metal substrates von ROWLAND LARRY B, FREITAS JAIME A

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Crystalline III-V nitride films on refractory metal substrates von Freitas, Jaime A, Rowland, Larry B

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Aqueaus flowable phenazaquin composition von ROWLAND, LARRY, B

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Power devices and methods of manufacture von FRONHEISER JODY A, ROWLAND LARRY B

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Semiconductor material having an epitaxial layer formed thereon and methods of making same von SOLOVIEV STANISLAV I, ROWLAND LARRY B, ARTHUR STEPHEN D

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Method of fabricating a MESFET with a sloped MESA structure von Zhang, An-Ping, Rowland, Larry B, Kretchmer, James W, Tucker, Jesse, Kaminsky, Edmund B

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