Improved measurement of electric fields by nanobeam precession electron diffraction von Bruas, L., Boureau, V., Conlan, A. P., Martinie, S., Rouviere, J.-L., Cooper, D.

Volltext

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge von Aubin, J, Hartmann, J M, Gassenq, A, Rouviere, J L, Robin, E, Delaye, V, Cooper, D, Mollard, N, Reboud, V, Calvo, V

Volltext

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology von Reboh, S., Coquand, R., Barraud, S., Loubet, N., Bernier, N., Audoit, G., Rouviere, J.-L., Augendre, E., Li, J., Gaudiello, J., Gambacorti, N., Yamashita, T., Faynot, O.

Volltext

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors von den Hertog, M. I, González-Posada, F, Songmuang, R, Rouviere, J. L, Fournier, T, Fernandez, B, Monroy, E

Volltext

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements von BONEF, B., HAAS, B., ROUVIÈRE, J‐L., ANDRÉ, R., BOUGEROL, C., GRENIER, A., JOUNEAU, P‐H., ZUO, J‐M.

Volltext

Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron hologr... von Béché, A., Rouvière, J.L., Barnes, J.P., Cooper, D.

Volltext

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate von Chaize, N, Baudry, X, Jouneau, P-H, Gautier, E, Rouvière, J-L, Deblock, Y, Xu, J, Berthe, M, Barbot, C, Grandidier, B, Desplanque, L, Sellier, H, Ballet, P

Volltext

Quantitative evaluation of process induced strain in MOS transistors by Convergent Beam Electron Diffraction von Clement, L., Cacho, F., Pantel, R., Rouviere, J.-L.

Volltext

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy von Monroy, E., Sarigiannidou, E., Fossard, F., Gogneau, N., Bellet-Amalric, E., Rouvière, J.-L., Monnoye, S., Mank, H., Daudin, B.

Volltext

Proposition of a model elucidating the AlN-on-Si (111) microstructure von Mante, N., Rennesson, S., Frayssinet, E., Largeau, L., Semond, F., Rouvière, J. L., Feuillet, G., Vennéguès, P.

Volltext

Nano-field mapping for the semiconductor industry von Cooper, D, Béché, A, Servanton, G, Pantel, R, Morin, P, Rouviere, J -L

Volltext

Theoretical discussions on the geometrical phase analysis von Rouvière, J.L., Sarigiannidou, E.

Volltext

Improved precision in strain measurement using nanobeam electron diffraction von Béché, A., Rouvière, J. L., Clément, L., Hartmann, J. M.

Volltext

Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction von Brunetti, G, Robert, D, Bayle-Guillemaud, P, Rouvière, J. L, Rauch, E. F, Martin, J. F, Colin, J. F, Bertin, F, Cayron, C

Volltext

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals von Rouviere, J. L., Weyher, J. L., Seelmann-Eggebert, M., Porowski, S.

Volltext

Towards a full retrieval of the deformation tensor F using convergent beam electron diffraction von Martin, Y., Rouviere, J.L., Zuo, J.M., Favre-Nicolin, V.

Volltext

Strain distribution in nitride quantum dot multilayers von Chamard, V., Schülli, T, Sztucki, M., Metzger, T. H., Sarigiannidou, E., Rouvière, J.-L., Tolan, M., Adelmann, C., Daudin, B.

Volltext

Zero-dimensional excitons in CdTe/ZnTe nanostructures von Marsal, L., Besombes, L., Tinjod, F., Kheng, K., Wasiela, A., Gilles, B., Rouvière, J.-L., Mariette, H.

Volltext

Hidden defects in silicon nanowires von den Hertog, M I, Cayron, C, Gentile, P, Dhalluin, F, Oehler, F, Baron, T, Rouviere, J L

Volltext

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode von Denneulin, T., Cooper, D., Rouviere, J.L.

Volltext