Calibrated nanoscale capacitance measurements using a scanning microwave microscope von Huber, H. P., Moertelmaier, M., Wallis, T. M., Chiang, C. J., Hochleitner, M., Imtiaz, A., Oh, Y. J., Schilcher, K., Dieudonne, M., Smoliner, J., Hinterdorfer, P., Rosner, S. J., Tanbakuchi, H., Kabos, P., Kienberger, F.

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Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures von Kamins, T. I., Carr, E. C., Williams, R. S., Rosner, S. J.

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Failure mode analysis of oxide VCSELs in high humidity and high temperature von Suning Xie, Herrick, R.W., Chamberlin, D., Rosner, S.J., McHugo, S., Girolami, G., Mayonte, M., Seongsin Kim, Widjaja, W.

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Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride von Rosner, S. J., Girolami, G., Marchand, H., Fini, P. T., Ibbetson, J. P., Zhao, L., Keller, S., Mishra, U. K., DenBaars, S. P., Speck, J. S.

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The role of threading dislocations in the physical properties of GaN and its alloys von Speck, J.S., Rosner, S.J.

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Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition von Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G., Erikson, H. I.

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Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells von Wu, X. H., Elsass, C. R., Abare, A., Mack, M., Keller, S., Petroff, P. M., DenBaars, S. P., Speck, J. S., Rosner, S. J.

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GaAs to InP wafer fusion von Ram, R. J., Dudley, J. J., Bowers, J. E., Yang, L., Carey, K., Rosner, S. J., Nauka, K.

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Microstructure of biepitaxial grain boundary junctions in YBa2Cu3O7 von ROSNER, S. J, CHAR, K, ZAHARCHUK, G

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Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P von FOUQUET, J. E, ROBBINS, V. M, ROSNER, J, BLUM, O

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Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces von Kish, F. A., Vanderwater, D. A., Peanasky, M. J., Ludowise, M. J., Hummel, S. G., Rosner, S. J.

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Photoluminescence excitation spectroscopy yields band gap of Ga0.5In0.5P containing relatively ordered domains von FOUQUET, J. E, MINSKY, M. S, ROSNER, S. J

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Double-diffused graded SiGe-base bipolar transistors von Vook, D., Kamins, T.I., Burton, G., Vande Voorde, P.J., Wang, H.-H., Coen, R., Lin, J., Pettengill, D.F., Yu, P.-K., Rosner, S.J., Turner, J.E., Laderman, S.S., Horng-Sen Fu, Wang, A.S.

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Effect of substrate surface structure on nucleation of GaAs on Si(100) von HULL, R, FISCHER-COLBRIE, A, ROSNER, S. J, KOCH, S. M, HARRIS, J. S. JR

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A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts von Huang, W.M., Drowley, C.I., Vande Voorde, P.J., Pettengill, D., Turner, J.E., Kapoor, A.K., Lin, C.-H., Burton, G., Rosner, S.J., Brigham, K., Fu, H.-S., Oh, S.-Y., Scott, M.P., Chiang, S.-Y., Wang, A.

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Limited reaction processing : growth of Si1-xGex/Si for heterojunction bipolar transistor applications von HOYT, J. L, KING, C. A, KAMINS, T. I, NOBLE, D. B, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, LADERMAN, S. S, ROSNER, S. J, NAUKA, K, TURNER, J

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LEPTONIC DECAYS OF CHARGED PSEUDOSCALAR MESONS von J. Rosner S. Stone R. Van de Water

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Nucleation and initial growth of GaAs on Si substrate von ROSNER, S. J, KOCH, S. M, HARRIS, J. S. JR

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Atomic structure of the GaAs/Si interface von HULL, R, ROSNER, S. J, KOCH, S. M, HARRIS, J. S. JR

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Thermal stability of Si/Si1-xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing von NOBLE, D. B, HOYT, J. L, GIBBONS, J. F, SCOTT, M. P, LADERMAN, S. S, ROSNER, S. J, KAMINS, T. I

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