Universal tunneling behavior in technologically relevant P/N junction diodes von Solomon, Paul M., Jopling, Jason, Frank, David J., D’Emic, Chris, Dokumaci, O., Ronsheim, P., Haensch, W. E.

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Impurity measurements in silicon with D-SIMS and atom probe tomography von Ronsheim, P., Flaitz, P., Hatzistergos, M., Molella, C., Thompson, K., Alvis, R.

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Depth profiling of emerging materials for semiconductor devices von Ronsheim, P.A.

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Mapping of electrostatic potential in deep submicron CMOS devices by electron holography von Gribelyuk, M A, McCartney, M R, Li, Jing, Murthy, C S, Ronsheim, P, Doris, B, McMurray, J S, Hegde, S, Smith, David J

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High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation von Guha, S., Gusev, E. P., Okorn-Schmidt, H., Copel, M., Ragnarsson, L.-Å, Bojarczuk, N. A., Ronsheim, P.

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Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack von MARTINEZ, E, RONSHEIM, P, GAMBACORTI, N, BARNES, J.-P, ROCHAT, N, PY, M, HATZISTERGOS, M, RENAULT, O, SILLY, M, SIROTTI, F, BERTIN, F

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Quantitative analysis of one-dimensional dopant profile by electron holography von McCartney, M. R., Gribelyuk, M. A., Li, Jing, Ronsheim, P., McMurray, J. S., Smith, David J.

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Electron Holography of CMOS Devices with Epitaxial Layers von Gribelyuk, M. A., Ontalus, V., Adam, T. N., Baumann, F. H., Ronsheim, P. R.

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Threshold voltage control in NiSi-gated MOSFETs through SIIS von Kedzierski, J., Boyd, D., Cabral, C., Ronsheim, P., Zafar, S., Kozlowski, P.M., Ott, J.A., Meikei Ieong

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Pulsed-laser atom probe tomography of p-type field effect transistors on Si-on-insulator substrates von Jin, S., Jones, K. S., Ronsheim, P. A., Hatzistergos, M.

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Central Prolactin Infusions Stimulate Maternal Behavior in Steroid-Treated, Nulliparous Female Rats von Bridges, Robert S., Numan, Michael, Ronsheim, Paul M., Mann, Phyllis E., Lupini, Caroline E.

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Strained Si CMOS (SS CMOS) technology: opportunities and challenges von Rim, K., Anderson, R., Boyd, D., Cardone, F., Chan, K., Chen, H., Christansen, S., Chu, J., Jenkins, K., Kanarsky, T., Koester, S., Lee, B.H., Lee, K., Mazzeo, V., Mocuta, A., Mocuta, D., Mooney, P.M., Oldiges, P., Ott, J., Ronsheim, P., Roy, R., Steegen, A., Yang, M., Zhu, H., Ieong, M., Wong, H.-S.P.

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers von Ronsheim, P.A., Loesing, R., Madan, A.

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers von RONSHEIM, P. A, LOESING, R, MADAN, A

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Towards Routine Backside SIMS Sample Preparation for Efficient Support of Advanced IC Process Development von Hopstaken, M J P, Cabral Jr, C, Pfeiffer, D, Molella, C, Ronsheim, P

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Dopant measurements in semiconductors with atom probe tomography von Ronsheim, P. A., Hatzistergos, M., Jin, S.

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Atom-Probe Tomography of Semiconductor Materials and Device Structures von Lauhon, Lincoln J., Adusumilli, Praneet, Ronsheim, Paul, Flaitz, Philip L., Lawrence, Dan

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Round-robin study of arsenic implant dose measurement in silicon by SIMS von Simons, D., Kim, K., Benbalagh, R., Bennett, J., Chew, A., Gehre, D., Hasegawa, T., Hitzman, C., Ko, J., Lindstrom, R., MacDonald, B., Magee, C., Montgomery, N., Peres, P., Ronsheim, P., Yoshikawa, S., Schuhmacher, M., Stockwell, W., Sykes, D., Tomita, M., Toujou, F., Won, J.

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Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs von Shahidi, G.G., Davari, B., Bucelot, T.J., Ronsheim, P.A., Coane, P.J., Pollack, S., Blair, C.R., Clark, B., Hansen, H.H.

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Expression of Fos within luteinizing hormone-releasing hormone neurons, in relation to the steroid-induced luteinizing hormone surge in guinea pigs von KING, J. C, LIU, E, RONSHEIM, P. M, SLONIMSKI, M, RUBIN, B. S

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