Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures von Tian-Li Wu, Bakeroot, Benoit, Hu Liang, Posthuma, Niels, Shuzhen You, Ronchi, Nicolo, Stoffels, Steve, Marcon, Denis, Decoutere, Stefaan

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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method von Meneghini, M., Ronchi, N., Stocco, A., Meneghesso, G., Mishra, U. K., Yi Pei, Zanoni, E.

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Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors von Lee, Sumi, Ronchi, Nicolo, Bizindavyi, Jasper, Popovici, Mihaela I., Banerjee, Kaustuv, Walke, Amey, Delhougne, Romain, Houdt, Jan Van, Shin, Changhwan

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Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate von Jie Hu, Stoffels, Steve, Lenci, Silvia, Bakeroot, Benoit, De Jaeger, Brice, Van Hove, Marleen, Ronchi, Nicolo, Venegas, Rafael, Hu Liang, Ming Zhao, Groeseneken, Guido, Decoutere, Stefaan

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Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia von McMitchell, Sean R. C., Clima, Sergiu, Ronchi, Nicolo', Banerjee, Kaustuv, Celano, Umberto, Popovici, Mihaela, Di Piazza, Luca, Van den Bosch, Geert, Van Houdt, Jan

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A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs von Chen, Zhuo, Ronchi, Nicolo, Tang, Hongwei, Walke, Amey M., Izmailov, Roman, Ioana Popovici, Mihaela, Van den Bosch, Geert, Rosmeulen, Maarten, Afanas'ev, Valeri V., Van Houdt, Jan

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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants von Wang, Yu-Yun, Wang, Kuan-Chi, Chang, Ting-Yu, Ronchi, Nicolò, O'Sullivan, Barry, Banerjee, Kaustuv, van den Bosch, Geert, Van Houdt, Jan, Wu, Tian-Li

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Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory von Chang, Ting-Yu, Wang, Kuan-Chi, Liu, Hsien-Yang, Hseun, Jing-Hua, Peng, Wei-Cheng, Ronchi, Nicolò, Celano, Umberto, Banerjee, Kaustuv, Van Houdt, Jan, Wu, Tian-Li

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Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers von Hu, Jie, Stoffels, Steve, Lenci, Silvia, You, Shuzhen, Bakeroot, Benoit, Ronchi, Nicolò, Venegas, Rafael, Groeseneken, Guido, Decoutere, Stefaan

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Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal-Ferroelectric-Insulator-Semiconductor Capacitors von Wu, Cheng-Hung, Ronchi, Nicolo', Wang, Kuan-Chi, Wang, Yu-Yun, Mcmitchell, Sean, Banerjee, Kaustuv, van Den Bosch, Geert, van Houdt, Jan, Wu, Tian-Li

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Reliability issues of Gallium Nitride High Electron Mobility Transistors von Meneghesso, Gaudenzio, Meneghini, Matteo, Tazzoli, Augusto, Ronchi, Nicolo', Stocco, Antonio, Chini, Alessandro, Zanoni, Enrico

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Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes von Hu, Jie, Stoffels, Steve, Lenci, Silvia, Wu, Tian-Li, Ronchi, Nicolò, You, Shuzhen, Bakeroot, Benoit, Groeseneken, Guido, Decoutere, Stefaan

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Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN hig... von Ronchi, Nicolò, De Jaeger, Brice, Van Hove, Marleen, Roelofs, Robin, Wu, Tian-Li, Hu, Jie, Kang, Xuanwu, Decoutere, Stefaan

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Comparison of AlGaN/GaN MISHEMT powerbar designs von Stoffels, Steve, Ronchi, Nicoló, Venegas, Rafael, De Jaeger, Brice, Marcon, Denis, Decoutere, Stefaan

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Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination von Acurio, Eliana, Crupi, Felice, Ronchi, Nicolo, De Jaeger, Brice, Bakeroot, Benoit, Decoutere, Stefaan, Trojman, Lionel

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Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors von Lee, Sumi, Ronchi, Nicolo, Bizindavyi, Jasper, Popovici, Mihaela I, Banerjee, Kaustuv, Walke, Amey, Delhougne, Romain, van Houdt, Jan, Shin, Changhwan

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Electron emission from deep traps in HfO 2 under thermal and optical excitation von Izmailov, Roman, Strand, Jack, Ronchi, Nicolo', Shluger, Alexander, Afanas'ev, Valeri

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Electron emission from deep traps in HfO 2 under thermal and optical excitation von Izmailov, Roman, Strand, Jack, Ronchi, Nicolo, Shluger, Alexander, Afanas'ev, Valeri

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(Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors von Zanoni, Enrico, Meneghesso, Gaudenzio, Meneghini, Matteo, Stocco, Antonio, Rampazzo, Fabiana, Silvestri, Riccardo, Rossetto, Isabella, Ronchi, Nicolò

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Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor von Min, Jinhong, Ronchi, Nicolo, McMitchell, Sean R.C, O'Sullivan, Barry, Banerjee, Kaustuv, Van den Bosch, Geert, Van Houdt, Jan, Shin, Changhwan

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