Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices von Lee, Jung-Kyu, Jung, Sunghun, Park, Jinwon, Chung, Sung-Woong, Sung Roh, Jae, Hong, Sung-Joo, Hwan Cho, Il, Kwon, Hyuck-In, Hyeong Park, Chan, Park, Byung-Gook, Lee, Jong-Ho

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Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate von HA, Seung-Chul, CHOI, Eunsuk, KIM, Soo-Hyun, JAE SUNG ROH

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Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor von Park, Dae-Gyu, Cho, Heung-Jae, Lim, Kwan-Yong, Lim, Chan, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma von Seong, Nak-Jin, Yoon, Soon-Gil, Yeom, Seung-Jin, Woo, Hyun-Kyung, Kil, Deok-Sin, Roh, Jae-Sung, Sohn, Hyun-Chul

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Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures von Park, Dae-Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Cha, Tae-Ho, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

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Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes von Kim, Ja-Yong, Kil, Deok-Sin, Kim, Jin-Hyock, Kwon, Se-Hun, Ahn, Ji-Hoon, Roh, Jae-Sung, Park, Sung-Ki

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Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes von Cha, Tae-Ho, Park, Dae-Gyu, Kim, Tae-Kyun, Jang, Se-Aug, Yeo, In-Seok, Roh, Jae-Sung, Park, Jin Won

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Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors von Joo, Jae-Hyun, Seon, Jeong-Min, Jeon, Yoo-Chan, Oh, Ki-Young, Roh, Jae-Sung, Kim, Jae-Jeong

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Modified atomic layer deposition of RuO2 thin films for capacitor electrodes von Kim, Jin-Hyock, Kil, Deok-Sin, Yeom, Seung-Jin, Roh, Jae-Sung, Kwak, Noh-Jung, Kim, Jin-Woong

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Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films von Kim, Nam Hee, Kim, Hyung Keun, Lee, Kyu Min, Sohn, Hyun Chul, Roh, Jae Sung, Choi, Doo Jin

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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide von LEE, Jung-Kyu, JUNG, Sunghun, CHOE, Byeong-In, PARK, Jinwon, CHUNG, Sung-Woong, JAE SUNG ROH, HONG, Sung-Joo, CHAN HYEONG PARK, PARK, Byung-Gook, LEE, Jong-Ho

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Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices von SUNG, Min-Gyu, YONG SOO KIM, JAE SUNG ROH, HONG, Seunghun, KIM, Heonho, SUNG HONG HAHN

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Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application von Kim, Hyung Keun, Roh, Jae Sung, Choi, Doo Jin

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Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application von Joong-Sik Kim, Sung-Woong Chung, Tae-Su Jang, Seung-Hwan Lee, Dong-Hee Son, Seoung-Ju Chung, Sang-Min Hwang, Banna, S, Bhardwaj, S, Gupta, M, Jungtae Kwon, Kim, D, Popov, G, Gopinath, V, Van Buskirk, M, Sang-Hoon Cho, Jae-Sung Roh, Sung-Joo Hong, Sung-Wook Park

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Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices von Yoon, Dong-Soo, Roh a, Jae Sung, Lee, Sung-Man, Baik, Hong Koo

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory von Sung, Min-Gyu, Kim, Sook Joo, Joo, Moon Sig, Roh, Jae Sung, Ryu, Cheolhwi, Hong, Seunghun, Kim, Heonho, Kim, Yong Soo

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2 von Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung

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Phase transition characteristics and electrical properties of nitrogen-doped GeSb thin films for PRAM applications von Lee, Seung Yun, Kim, Hyung Keun, Kim, Jin Hyock, Roh, Jae Sung, Choi, Doo Jin

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Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application von Kim, Myoung Sub, Cho, Sung Hyuk, Hong, Suk Kyoung, Roh, Jae Sung, Choi, Doo Jin

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Composition and Electrical Properties of Metallic Ru Thin Films Deposited Using Ru(C 6 H 6 )(C 6 H 8 ) Precursor von Choi, Jongwan, Choi, Youngmin, Hong, Jongin, Tian, Huyong, Roh, Jae-Sung, Kim, Younsoo, Chung, Taek-Mo, Oh, Young Woo, Kim, Yunsoo, Kim, Chang Gyun, No, Kwangsoo

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