DELIVERY ASSEMBLY FOR A COFFEE BEVERAGE AND CORRESPONDING DELIVERY MACHINE von ROCCAFORTE, Filippo, BULIGATTO, Eleonora, PIRAS, Riccardo, CESCUTTI, Francesco

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DELIVERY ASSEMBLY FOR A COFFEE BEVERAGE AND CORRESPONDING DELIVERY MACHINE von Roccaforte, Filippo, Buligatto, Eleonora, Cescutti, Francesco, Piras, Riccardo

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DELIVERY ASSEMBLY FOR A COFFEE BEVERAGE AND CORRESPONDING DELIVERY MACHINE von ROCCAFORTE, Filippo, BULIGATTO, Eleonora, PIRAS, Riccardo, CESCUTTI, Francesco

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DELIVERY ASSEMBLY FOR A COFFEE BEVERAGE AND CORRESPONDING DELIVERY MACHINE von ROCCAFORTE, Filippo, BULIGATTO, Eleonora, PIRAS, Riccardo, CESCUTTI, Francesco

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DELIVERY ASSEMBLY FOR A COFFEE BEVERAGE AND CORRESPONDING DELIVERY MACHINE von PIRAS, RICCARDO, CESCUTTI, FRANCESCO, BULIGATTO, ELEONORA, ROCCAFORTE, FILIPPO

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ASSIEME DI EROGAZIONE DI BEVANDA CAFFE' E RELATIVA MACCHINA DI EROGAZIONE von PIRAS, RICCARDO, CESCUTTI, FRANCESCO, BULIGATTO, ELEONORA, ROCCAFORTE, FILIPPO

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Conjunto dispensador para una bebida de café y máquina dispensadora correspondiente von ROCCAFORTE, Filippo, BULIGATTO, Eleonora, PIRAS, Riccardo, CESCUTTI, Francesco

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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review von Fiorenza, Patrick, Giannazzo, Filippo, Roccaforte, Fabrizio

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Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs von Fiorenza, Patrick, Giannazzo, Filippo, Cascino, Salvatore, Saggio, Mario, Roccaforte, Fabrizio

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Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model von Greco, Giuseppe, Giannazzo, Filippo, Roccaforte, Fabrizio

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Materials and Processes for Schottky Contacts on Silicon Carbide von Vivona, Marilena, Giannazzo, Filippo, Roccaforte, Fabrizio

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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs von Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio

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Selective Doping in Silicon Carbide Power Devices von Roccaforte, Fabrizio, Fiorenza, Patrick, Vivona, Marilena, Greco, Giuseppe, Giannazzo, Filippo

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire von Panasci, Salvatore Ethan, Schilirò, Emanuela, Koos, Antal, Roccaforte, Fabrizio, Cannas, Marco, Agnello, Simonpietro, Pécz, Béla, Giannazzo, Filippo

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Schottky contacts on sulfurized silicon carbide (4H-SiC) surface von Roccaforte, Fabrizio, Vivona, Marilena, Panasci, Salvatore Ethan, Greco, Giuseppe, Fiorenza, Patrick, Sulyok, Attila, Koos, Antal, Pecz, Bela, Giannazzo, Filippo

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Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization von Giannazzo, Filippo, Fisichella, Gabriele, Greco, Giuseppe, Di Franco, Salvatore, Deretzis, Ioannis, La Magna, Antonino, Bongiorno, Corrado, Nicotra, Giuseppe, Spinella, Corrado, Scopelliti, Michelangelo, Pignataro, Bruno, Agnello, Simonpietro, Roccaforte, Fabrizio

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Vertical Transistors Based on 2D Materials: Status and Prospects von Giannazzo, Filippo, Greco, Giuseppe, Roccaforte, Fabrizio, Sonde, Sushant

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Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates von Schilirò, Emanuela, Greco, Giuseppe, Fiorenza, Patrick, Panasci, Salvatore Ethan, Di Franco, Salvatore, Cordier, Yvon, Frayssinet, Eric, Lo Nigro, Raffaella, Giannazzo, Filippo, Roccaforte, Fabrizio

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Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide von Spera, Monia, Greco, Giuseppe, Severino, Andrea, Vivona, Marilena, Fiorenza, Patrick, Giannazzo, Filippo, Roccaforte, Fabrizio

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Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale von Fisichella, Gabriele, Greco, Giuseppe, Roccaforte, Fabrizio, Giannazzo, Filippo

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