Hole Selective MoOx Contact for Silicon Solar Cells von BATTAGLIA, Corsin, XINGTIAN YIN, WALLACE, Robert M, JAVEY, Ali, ZHENG, Maxwell, SHARP, Ian D, CHEN, Teresa, MCDONNELL, Stephen, AZCATL, Angelica, CARRARO, Carlo, BIWU MA, MABOUDIAN, Roya

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High-K materials and metal gates for CMOS applications von Robertson, John, Wallace, Robert M.

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The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces von Gong, Cheng, Colombo, Luigi, Wallace, Robert M, Cho, Kyeongjae

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Defect-Dominated Doping and Contact Resistance in MoS2 von McDonnell, Stephen, Addou, Rafik, Buie, Creighton, Wallace, Robert M, Hinkle, Christopher L

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The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy von Acik, Muge, Lee, Geunsik, Mattevi, Cecilia, Pirkle, Adam, Wallace, Robert M, Chhowalla, Manish, Cho, Kyeongjae, Chabal, Yves

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Near-unity photoluminescence quantum yield in MoS2 von Matin Amani, Der-Hsien, Lien, Kiriya, Daisuke, Xiao, Jun, Azcatl, Angelica, Noh, Jiyoung, Madhvapathy, Surabhi R, Addou, Rafik, Santosh, K C, Dubey, Madan, Cho, Kyeongjae, Wallace, Robert M, Si-Chen, Lee, Jr-Hau He, Ager, Joel W, Zhang, Xiang, Yablonovitch, Eli

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Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing von Zhu, Hui, Wang, Qingxiao, Cheng, Lanxia, Addou, Rafik, Kim, Jiyoung, Kim, Moon J, Wallace, Robert M

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Contact Engineering High-Performance n‑Type MoTe2 Transistors von Mleczko, Michal J, Yu, Andrew C, Smyth, Christopher M, Chen, Victoria, Shin, Yong Cheol, Chatterjee, Sukti, Tsai, Yi-Chia, Nishi, Yoshio, Wallace, Robert M, Pop, Eric

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MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts von CHUANG, Steven, BATTAGLIA, Corsin, JAVEY, Ali, AZCATL, Angelica, MCDONNELL, Stephen, JEONG SEUK KANG, XINGTIAN YIN, TOSUN, Mahmut, KAPADIA, Rehan, HUI FANG, WALLACE, Robert M

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Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides von Amani, Matin, Taheri, Peyman, Addou, Rafik, Ahn, Geun Ho, Kiriya, Daisuke, Lien, Der-Hsien, Ager, Joel W, Wallace, Robert M, Javey, Ali

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Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2‑Based Device Performance von Smyth, Christopher M, Addou, Rafik, McDonnell, Stephen, Hinkle, Christopher L, Wallace, Robert M

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Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition von Eichfeld, Sarah M, Hossain, Lorraine, Lin, Yu-Chuan, Piasecki, Aleksander F, Kupp, Benjamin, Birdwell, A. Glen, Burke, Robert A, Lu, Ning, Peng, Xin, Li, Jie, Azcatl, Angelica, McDonnell, Stephen, Wallace, Robert M, Kim, Moon J, Mayer, Theresa S, Redwing, Joan M, Robinson, Joshua A

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Remote Plasma Oxidation and Atomic Layer Etching of MoS2 von Zhu, Hui, Qin, Xiaoye, Cheng, Lanxia, Azcatl, Angelica, Kim, Jiyoung, Wallace, Robert M

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Carbon-Based Supercapacitors Produced by Activation of Graphene von Zhu, Yanwu, Murali, Shanthi, Stoller, Meryl D., Ganesh, K. J., Cai, Weiwei, Ferreira, Paulo J., Pirkle, Adam, Wallace, Robert M., Cychosz, Katie A., Thommes, Matthias, Su, Dong, Stach, Eric A., Ruoff, Rodney S.

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Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping von Zhang, Kehao, Bersch, Brian M., Joshi, Jaydeep, Addou, Rafik, Cormier, Christopher R., Zhang, Chenxi, Xu, Ke, Briggs, Natalie C., Wang, Ke, Subramanian, Shruti, Cho, Kyeongjae, Fullerton‐Shirey, Susan, Wallace, Robert M., Vora, Patrick M., Robinson, Joshua A.

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Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments von McDonnell, Stephen, Azcatl, Angelica, Addou, Rafik, Gong, Cheng, Battaglia, Corsin, Chuang, Steven, Cho, Kyeongjae, Javey, Ali, Wallace, Robert M

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Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures von Lin, Yu-Chuan, Ghosh, Ram Krishna, Addou, Rafik, Lu, Ning, Eichfeld, Sarah M., Zhu, Hui, Li, Ming-Yang, Peng, Xin, Kim, Moon J., Li, Lain-Jong, Wallace, Robert M., Datta, Suman, Robinson, Joshua A.

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Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon von Zhang, Li Li, Zhao, Xin, Ji, Hengxing, Stoller, Meryl D., Lai, Linfei, Murali, Shanthi, Mcdonnell, Stephen, Cleveger, Brandon, Wallace, Robert M., Ruoff, Rodney S.

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HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability von McDonnell, Stephen, Brennan, Barry, Azcatl, Angelica, Lu, Ning, Dong, Hong, Buie, Creighton, Kim, Jiyoung, Hinkle, Christopher L, Kim, Moon J, Wallace, Robert M

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New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2 von Zhu, Hui, Wang, Qingxiao, Zhang, Chenxi, Addou, Rafik, Cho, Kyeongjae, Wallace, Robert M., Kim, Moon J.

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