Minority carrier lifetime in indium doped silicon for photovoltaics von Murphy, John D., Pointon, Alex I., Grant, Nicholas E., Shah, Vishal A., Myronov, Maksym, Voronkov, Vladimir V., Falster, Robert J.

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Permanent deactivation of boron-oxygen recombination centres in silicon von Voronkov, Vladimir, Falster, Robert

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Fast and Slow Vacancies in Silicon von Falster, Robert, Voronkov, Vladimir V.

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Vacancy out-diffusion in nitrogen-doped silicon von Voronkov, Vladimir, Falster, Robert

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The nature of boron-oxygen lifetime-degrading centres in silicon von Voronkov, Vladimir, Falster, Robert

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Formation, dissociation, and diffusion of various hydrogen dimers in silicon von Voronkov, Vladimir V., Falster, Robert

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Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles von Voronkov, Vladimir V., Falster, Robert

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Intrinsic Point Defects in Silicon Crystal Growth von Falster, Robert, Voronkov, Vladimir V.

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Multiple structural forms of a vacancy in silicon as evidenced by vacancy profiles produced by rapid thermal annealing von Voronkov, Vladimir, Falster, Robert

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Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers von Falster, Robert J., Voronkov, Vladimir V.

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Easy-to-apply methodology to measure the hydrogen concentration in boron-doped crystalline silicon von Walter, Dominic C., Bredemeier, Dennis, Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan

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Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors von Voronkov, Vladimir, Falster, Robert

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Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon von Helmich, Lailah, Walter, Dominic C., Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan

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On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon von Walter, Dominic C., Voronkov, Vladimir V., Falster, Robert, Bredemeier, Dennis, Schmidt, Jan

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Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon von Schmidt, Jan, Bothe, Karsten, Voronkov, Vladimir V., Falster, Robert

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Quantification of Defect Dynamics in Unsteady-State and Steady-State Czochralski Growth of Monocrystalline Silicon [J. Electrochem. Soc., 151, G663 (2004)] von Kulkarni, Milind S., Voronkov, Vladimir, Falster, Robert

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Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps von De Guzman, Joyce Ann T., Markevich, Vladimir P., Hawkins, Ian D., Ayedh, Hussein M., Coutinho, José, Binns, Jeff, Falster, Robert, Abrosimov, Nikolay V., Crowe, Iain F., Halsall, Matthew P., Peaker, Anthony R.

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The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon von Giannattasio, Armando, Senkader, Semih, Falster, Robert J., Wilshaw, Peter R.

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Lifetime recovery in p -type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process von Lim, Bianca, Voronkov, Vladimir V., Falster, Robert, Bothe, Karsten, Schmidt, Jan

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Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping von Falster, Robert J., Voronkov, Vladimir V.

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