Chemical free room temperature wafer to wafer direct bonding von FARRENS, S. N, DEKKER, J. R, SMITH, J. K, ROBERDS, B. E

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OPTICAL DEVICE HAVING PHASE CHANGE MATERIAL AND ASSOCIATED METHODS von ROBERDS, BRIAN, MITKOVA-VASSILEVA, MARIA I, AHMED SIMON, AL-AMIN

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Silicon layer transfer using wafer bonding and debonding von COLINGE, Cynthia, ROBERDS, Brian, DOYLE, Brian

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An atomic force microscopy study on the roughness of silicon wafers correlated with direct wafer bonding von ROBERDS, B. E, FARRENS, S. N

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Technique to produce isolated junctions by forming an insulation layer von Roberds, Brian

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Technique to produce isolated junctions by forming an insulation layer von ROBERDS BRIAN

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Technique to produce isolated junctions by forming an insulation layer von Roberds, Brian

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TECHNIQUE TO PRODUCE ISOLATED JUNCTIONS BY FORMING AN INSULATION LAYER von ROBERDS BRIAN

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TECHNIQUE TO PRODUCE ISOLATED JUNCTIONS BY FORMING AN INSULATION LAYER von Roberds, Brian

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SYSTEMS AND METHODS FOR FACILITATING REMOTE SECURITY THREAT DETECTION von ROBERDS BRIAN, SURFACE TIMOTHY, CROWLEY RAYMOND, KRANTZ DANIEL, WOOD SHAWN

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Creation of high mobility channels in thin-body SOI devices von Doyle, Brian S, Roberds, Brian E

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Creation of high mobility channels in thin-body SOI devices von ROBERDS BRIAN E, DOYLE BRIAN S

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Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel von Roberds, Brian, Doyle, Brian

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Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel von Roberds, Brian, Doyle, Brian

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Methodology for control of short channel effects in MOS transistors von Roberds, Brian, Doyle, Brian

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MOS transistor using mechanical stress to control short channel effects von ROBERDS BRIAN, DOYLE BRIAN S

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Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel von ROBERDS BRIAN, DOYLE BRIAN S

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Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering von ROBERDS BRIAN, BARLAGE DOULGAS W

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Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering von ROBERDS BRIAN, BARLAGE DOULGAS W

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Creation of high mobility channels in thin-body SOI devices von ROBERDS BRIAN E, DOYLE BRIAN S

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