Valence band engineering of GaAsBi for low noise avalanche photodiodes von Liu, Yuchen, Yi, Xin, Bailey, Nicholas J., Zhou, Zhize, Rockett, Thomas B. O., Lim, Leh W., Tan, Chee H., Richards, Robert D., David, John P. R.

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GaAsBi: From Molecular Beam Epitaxy Growth to Devices von Richards, Robert D., Bailey, Nicholas J., Liu, Yuchen, Rockett, Thomas B. O., Mohmad, Abdul R.

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Thermal Imaging Metrology Using High Dynamic Range Near-Infrared Photovoltaic-Mode Camera von Rockett, Thomas B. O., Boone, Nicholas A., Richards, Robert D., Willmott, Jon R.

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Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties von Gelczuk, Łukasz, Kopaczek, Jan, Rockett, Thomas B. O., Richards, Robert D., Kudrawiec, Robert

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Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods von Rockett, Thomas B.O., Adham, Nada A., Harun, Faezah, David, John P.R., Richards, Robert D.

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Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi von Wilson, Tom, Hylton, Nicholas P., Harada, Yukihiro, Pearce, Phoebe, Alonso-Álvarez, Diego, Mellor, Alex, Richards, Robert D., David, John P. R., Ekins-Daukes, Nicholas J.

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Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications von Rusli, Julie Roslita, Abdul Rahman, Muhammad Ghazali, Richards, Robert D., Harun, Faezah, David, John P.R.

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A retrospective review of α-gal syndrome complicating the management of suspected pancreatic exocrine insufficiency in one gastroenterology clinic in central Virginia von Richards, Nathan E., Wilson, Jeffrey M., Platts-Mills, Thomas A. E., Richards, Robert D.

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Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes von Tao, Xiaofeng, Jin, Xiao, Gao, Shiyuan, Yi, Xin, Liu, Yuchen, Rockett, Thomas B. O., Bailey, Nicholas. J., Harun, Faezah, Adham, Nada A., H Tan, Chee, Richards, Robert D., David, John P. R.

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MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization von Richards, Robert D, Bastiman, Faebian, Roberts, John S, Beanland, Richard, Walker, David, David, John P R

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Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy von Walther, Thomas, Richards, Robert D., Bastiman, Faebian

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Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires von Okujima, Masahiro, Yoshikawa, Kohei, Mori, Shota, Yukimune, Mitsuki, Richards, Robert D., Zhang, Bin, Chen, Weimin M., Buyanova, Irina A., Ishikawa, Fumitaro

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Growth and structural characterization of GaAsBi GaAs multiple quantum wells von Richards, Robert D, Bastiman, Faebian, Walker, David, Beanland, Richard, David, John P R

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Absorption properties of GaAsBi based p-i-n heterojunction diodes von Zhou, Zhize, Mendes, Danuta F, Richards, Robert D, Bastiman, Faebian, David, John PR

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Compulsory process in cyberspace: rethinking privacy in the social networking age von Richards, Robert D

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Molecular beam epitaxy growth of GaAsBi using As2 and As4 von Richards, Robert D., Bastiman, Faebian, Hunter, Christopher J., Mendes, Danuta F., Mohmad, Abdul R., Roberts, John S., David, John P.R.

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GaAsBi: From Molecular Beam Epitaxy Growth to Devices von Richards, Robert D., Bailey, Nicholas J., Liu, Yuchen, Rockett, Thomas B. O., Mohmad, Abdul R.

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Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature von Gelczuk, Łukasz, Kopaczek, Jan, Pucicki, Damian, Rockett, Thomas B.O., Richards, Robert D., Kudrawiec, Robert

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Development of an Inventory Assessing Social and Emotional Skills in Brazilian Youth von Primi, Ricardo, Santos, Daniel, John, Oliver P., Fruyt, Filip De

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The Role of Personality in Predicting (Change in) Students' Academic Success Across Four Years of Secondary School von Spengler, Marion, Brunner, Martin, Martin, Romain, Lüdtke, Oliver

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