Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET von Boige, F., Tremouilles, D., Richardeau, F.

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Multicell converters: derived topologies von Meynard, T.A., Foch, H., Forest, F., Turpin, C., Richardeau, F., Delmas, L., Gateau, G., Lefeuvre, E.

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Failures-tolerance and remedial strategies of a PWM multicell inverter von Richardeau, F., Baudesson, P., Meynard, T.A.

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Use of opposition method in the test of high-power electronic converters von Forest, F., Huselstein, J.-J., Faucher, S., Elghazouani, M., Ladoux, P., Meynard, T.A., Richardeau, F., Turpin, C.

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Reliability Calculation of Multilevel Converters: Theory and Applications von Richardeau, F., Pham, T. T. L.

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Architecture Complexity and Energy Efficiency of Small Wind Turbines von Mirecki, A., Roboam, X., Richardeau, F.

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Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling von Smet, V., Forest, F., Huselstein, J., Richardeau, F., Khatir, Z., Lefebvre, S., Berkani, M.

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Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress von Richardeau, F., Barazi, Y.

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Fault management of multicell converters von Turpin, C., Baudesson, P., Richardeau, F., Forest, F., Meynard, T.A.

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Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation von Boige, F., Richardeau, F.

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Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition von Richardeau, F., Boige, F.

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Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements von Ghizzo, L., Trémouilles, D., Richardeau, F., Guibaud, G.

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Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM von Shqair, M., Sarraute, E., Cazimajou, T., Richardeau, F.

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Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements von Ghizzo, L., Trémouilles, D., Richardeau, F., Guibaud, G.

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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches von Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Jamin, F., Guibaud, G.

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SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation von Boige, F., Richardeau, F., Lefebvre, S., Cousineau, M.

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Preconditioning of p-GaN power HEMT for reproducible V measurements von Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Moreau, L., Mauran, N.

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Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode von Castellazzi, A., Richardeau, F., Borghese, A., Boige, F., Fayyaz, A., Irace, A., Guibaud, G., Chazal, V.

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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation von Boige, F., Richardeau, F., Trémouilles, D., Lefebvre, S., Guibaud, G.

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Preconditioning of p-GaN power HEMT for reproducible Vth measurements von Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Moreau, L., Mauran, N.

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