Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length von Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.

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Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11 von Hart, John, Adam, Thomas, Kim, Yihwan, Huang, Yi-Chiau, Reznicek, Alexander, Hazbun, Ramsey, Gupta, Jay, Kolodzey, James

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Effects of stress on the dielectric function of strained pseudomorphic Si1−xGex alloys from 0 to 75% Ge grown on Si (001) von Raja Muthinti, Gangadhara, Medikonda, Manasa, Adam, Thomas, Reznicek, Alexander, Diebold, Alain C.

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Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices von LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi

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ICSI-9, Montréal 2015: Silicon for now and beyond von Baribeau, Jean-Marc, Bauer, Matthias, Desjardins, Patrick, Lee, Minjoo Larry, Loo, Roger, Moutanabbir, Oussama, Rastelli, Armando, Reznicek, Alexander, Quitoriano, Nate

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Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) von Medikonda, Manasa, Muthinti, Gangadhara R., Vasić, Relja, Adam, Thomas N., Reznicek, Alexander, Wormington, Matthew, Malladi, Girish, Kim, Yihwan, Huang, Yi-Chiau, Diebold, Alain C.

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Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films von Adam, Thomas, Loubet, Nicolas, Reznicek, Alexander, Paruchuri, Vamsi, Sampson, Ron, Sadana, Devendra

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High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition von He, Hong, Brabant, Paul, Chung, Keith, Shinriki, Manabu, Adam, Thomas, Reznicek, Alexander, Sadana, Devendra, Hasaka, Satoshi, Francis, Terry

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High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension von Khakifirooz, Ali, Kangguo Cheng, Jin Cai, Kimball, Anne, Kulkarni, Pranita, Reznicek, Alexander, Adam, Thomas, Edge, Lisa, Huiming Bu, Doris, Bruce, Shahidi, Ghavam

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Vertical transistor with eDRAM von Reznicek, Alexander

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Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs von Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam

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MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES von REZNICEK, Alexander, HASHEMI, Pouya

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MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES von Reznicek, Alexander, Hashemi, Pouya

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ENHANCED STATE DUAL MEMORY CELL von HEKMATSHOARTABARI, Bahman, REZNICEK, Alexander

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Vertical reconfigurable field effect transistor von Alexander Reznicek, Bahman Hekmatshoartabari

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VERTICALLY STACKED CASCODE BIPOLAR JUNCTION TRANSISTOR (BJT) PAIR SENSOR von Reznicek, Alexander, Hekmatshoartabari, Bahman

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SIMS quantification of SiGe composition with low-energy ion beams von Zhu, Zhengmao, Ronsheim, Paul, Turansky, Andrew, Hatzistergos, Michael, Madan, Anita, Pinto, Teresa, Holt, Judson, Reznicek, Alexander

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Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices von Loubet, Nicolas, Adam, Thomas, Raymond, Mark, Liu, Qing, Cheng, Kangguo, Sreenivasan, Raghavasimhan, Reznicek, Alexander, Khare, Prasanna, Kleemeier, Walter, Paruchuri, Vamsi, Doris, Bruce, Sampson, Ron

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Nanosheet isolated source/drain epitaxy by surface treatment and incubation delay von Reznicek, Alexander

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Vertical reconfigurable field effect transistor von Hekmatshoartabari, Bahman, Reznicek, Alexander

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