Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation von BOLKHOVITYANOV, Yu. B, DERYABIN, A. S, GUTAKOVSKII, A. K, REVENKO, M. A, SOKOLOV, L. V

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Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy von Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V.

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation von Bolkhovityanov, Yu.B, Gutakovskii, A.K, Mashanov, V.I, Pchelyakov, O.P, Revenko, M.A, Sokolov, L.V

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Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth von Putyato, M A, Bolkhovityanov, Yu B, Chikichev, S I, Feklin, D F, Gilinsky, A M, Gutakovskii, A K, Preobrazhenskii, V V, Revenko, M A, Semyagin, B R, Chtcherbatchev, K D

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X-ray interference topography investigation of Si/GexSi1−x/Si(001) heterosystem von Fedorov, A A, Trukhanov, E M, Vasilenko, A P, Kolesnikov, A V, Revenko, M A

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Heterostructures GexSi1-x/Si(001) grown by low-temperature (300-400°C) molecular beam epitaxy : Misfit dislocation propagation von BOLKHOVITYANOV, Yu. B, DERYABIN, A. S, GUTAKOVSKII, A. K, REVENKO, M. A, SOKOLOV, L. V

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Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films von Alperovich, V. L., Bolkhovityanov, Yu. B., Jaroshevich, A. S., Katkov, A. V., Revenko, M. A., Scheibler, H. E., Terekhov, A. S.

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Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer von Bolkhovityanov, Yu. B., Gutakovskii, A. K., Mashanov, V. I., Pchelyakov, O. P., Revenko, M. A., Sokolov, L. V.

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Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films von Bolkhovityanov, Yu B, Jaroshevich, A S, Revenko, M A, Scheibler, H E, Terekhov, A S

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InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source von Putyato, M.A, Preobrazhenskii, V.V, Semyagin, B.R, Bolkhovityanov, Yu.B, Gilinsky, A.M, Gutakousky, A.K, Revenko, M.A, Pchelyakov, O.P, Feklin, D.F

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Diffraction method for structure investigations of semiconductor heterosystems using synchrotron variable wavelength von Trukhanov, E.M, Revenko, M.A, Amirzhanov, R.M, Fedorov, A.A, Kolesnikov, A.V, Nikitenko, S.G, Vasilenko, A.P

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1) von Gutakovsky, A.K, Katkov, A.V, Katkov, M.I, Pchelyakov, O.P, Revenko, M.A

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Optimization of the plastic relaxation of misfit stresses in GexSi1−x /Si(001) (x≤0.61) heterostructures von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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Highly strained InGaAsP films with high critical thicknesses von Bolkhovityanov, Yu. B., Jaroshevich, A. S., Nomerotsky, N. V., Revenko, M. A., Trukhanov, E. M.

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Heterostructures Ge(x)Si(1-x)/Si(001) (x = 0.18-0.62) grown by molecular beam epitaxy at a low (350 C) temperature: Specific features of plastic relaxation von Bolkhovityanov, Y B, Deryabin, A S, Gutakovskii, A K, Revenko, M A, Sokolov, L V

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InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy von Bolkhovityanov, Yu. B., Jaroshevich, A. S., Nomerotsky, N. V., Revenko, M. A., Trukhanov, E. M.

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Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps von Bolkhovityanov, Yu.B., Jaroshevich, A.S., Nomerotsky, N.V., Revenko, M.A., Trukhanov, E.M.

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