Heterostructures GexSi1-x/Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation von BOLKHOVITYANOV, Yu. B, DERYABIN, A. S, GUTAKOVSKII, A. K, REVENKO, M. A, SOKOLOV, L. V

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Synthesis, antibacterial, and antifungal activities of 8-quinolinealdehyde chalcogensemicarbazones and their copper(II) complexes von Revenko, M. D., Prisacari, V. I., Dizdari, A. V., Stratulat, E. F., Corja, I. D., Proca, L. M.

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Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy von Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Revenko, M.A., Sokolov, L.V.

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Determination of cadmium by cathodic stripping voltammetry in the presence of 4-phenylthiosemicarbazide von Kazak, T. A., Revenko, M. D.

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation von Bolkhovityanov, Yu.B, Gutakovskii, A.K, Mashanov, V.I, Pchelyakov, O.P, Revenko, M.A, Sokolov, L.V

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Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth von Putyato, M A, Bolkhovityanov, Yu B, Chikichev, S I, Feklin, D F, Gilinsky, A M, Gutakovskii, A K, Preobrazhenskii, V V, Revenko, M A, Semyagin, B R, Chtcherbatchev, K D

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Synthesis and structure of new copper(II) coordination compounds with 8-quinoline aldehyde semicarbazones and thiosemicarbazones von Bourosh, P. N., Revenko, M. D., Stratulat, E. F., Wicher, B., Gdaniec, M., Korzha, I. D.

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Searching for the synthetic methods towards siloxane molecular brushes von Obrezkova, M. A., Selifanova, A. A., Revenko, V. K., Muzafarov, A. M.

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X-ray interference topography investigation of Si/GexSi1−x/Si(001) heterosystem von Fedorov, A A, Trukhanov, E M, Vasilenko, A P, Kolesnikov, A V, Revenko, M A

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Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1) von Gutakovsky, A.K, Katkov, A.V, Katkov, M.I, Pchelyakov, O.P, Revenko, M.A

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Synthesis and structure of copper(II) coordination compounds with 8-quinolinecarboxaldehyde thio- and 4-phenylthiosemicarbazones von Revenko, M. D, Bourosh, P. N, Stratulat, E. F, Gdaniec, M, Lipkowski, Ya, Korzha, I. D, Simonov, Yu. A

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Heterostructures GexSi1-x/Si(001) grown by low-temperature (300-400°C) molecular beam epitaxy : Misfit dislocation propagation von BOLKHOVITYANOV, Yu. B, DERYABIN, A. S, GUTAKOVSKII, A. K, REVENKO, M. A, SOKOLOV, L. V

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Molecular and crystal structure of quinoline-2-aldehyde thiosemicarbazone von Bourosh, P. N., Revenko, M. D., Gdaniec, M., Stratulat, E. F., Simonov, Yu. A.

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Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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Synthesis and structure of iron(III) complexes with a new ligands based on Girard’s reagent von Revenko, M. D., Bourosh, P. N., Palamarchuk, O. V., Lipkowski, J., Gdaniec, M., Simonov, Yu. A.

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Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy von Bolkhovityanov, Yu. B., Deryabin, A. S., Gutakovskii, A. K., Revenko, M. A., Sokolov, L. V.

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Copper(II) coordination compounds with 8-quinolinaldehyde semicarbazone: Synthesis and structure von Revenko, M. D., Bourosh, P. N., Stratulat, E. F., Corja, I. D., Gdaniec, M., Simonov, Yu. A., Tuna, F.

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Structure of quinoline-8-aldehyde S-methyl thiosemicarbazone dihydrochloride von Botoshanskii, M., Bourosh, P. N., Revenko, M. D., Korzha, I. D., Simonov, Yu. A., Panfilie, T.

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X-ray interference topography investigation of Si/Ge x Si 1  x /Si(001) heterosystem von Fedorov, A A, Trukhanov, E M, Vasilenko, A P, Kolesnikov, A V, Revenko, M A

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