Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress von Matsushima, Hiroyuki, Yamada, Renichi, Shima, Akio

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6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer von Watanabe, Naoki, Yamada, Renichi, Yoshimoto, Hiroyuki, Shima, Akio, Shimamoto, Yasuhiro

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Analyzing charge distribution in the termination area of 4H-SiC diodes by measuring depletion-layer capacitance von Matsushima, Hiroyuki, Okino, Hiroyuki, Mochizuki, Kazuhiro, Yamada, Renichi

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Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC von Shimamoto, Yasuhiro, Mori, Yuki, Hamamura, Hirotaka, Mine, Toshiyuki, Shima, Akio, Yamada, Renichi, Matsumura, Mieko

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A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates von Mochizuki, Kazuhiro, Okino, Hiroyuki, Matsushima, Hiroyuki, Yamada, Renichi

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Dielectric Thin Films for Future Electron Devices: Science and Technology

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Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p-n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring von Mochizuki, Kazuhiro, Kameshiro, Norifumi, Matsushima, Hiroyuki, Okino, Hiroyuki, Yamada, Renichi

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Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology von Onose, Hidekatsu, Yamada, Renichi, Mori, Mutsuhiro, Kobayashi, Yutaka, Onuki, Jin

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The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices von Yamada, Renichi, Mochizuki, Kazuhiro, Matsushima, Hiroyuki, Okino, Hiroyuki

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes von Okino, Hiroyuki, Yamada, Renichi, Konishi, Kumiko, Inada, Naomi, Shima, Akio, Mochizuki, Kazuhiro, Yokoyama, Natsuki, Kameshiro, Norifumi

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A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT von Miki, Hiroshi, Toyota, Yoshiaki, Mochizuki, Kazuhiro, Yokoyama, Natsuki, Yasui, Kan, Okino, Hiroyuki, Hasegawa, Jiro, Matsuhima, Hiroyuki, Mori, Mutsuhiro, Yamada, Renichi, Kameshiro, Norifumi, Onose, Hidekatsu, Hirao, Takashi, Oda, Tetsuo

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Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM von Tega, N., Miki, H., Yamaoka, M., Kume, H., Toshiyuki Mine, Ishida, T., Yuki Mori, Yamada, R., Kazuyoshi Torii

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Characteristic Instabilities in HfAlO Metal-Insulator-Metal Capacitors Under Constant-Voltage Stress von Takeda, K., Yamada, R., Imai, T., Fujiwara, T., Hashimoto, T., Ando, T.

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Characterization of Charge Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) Structures for Embedded Flash Memories von Ishida, T., Okuyama, Y., Yamada, R.

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Characteristic Instabilities in HfA1O Metal-Insulator-Metal Capacitors Under Constant-Voltage Stress von TAKEDA, Kenichi, YAMADA, Renichi, IMAI, Toshinori, FUJIWARA, Tsuyoshi, HASHIMOTO, Takashi, ANDO, Toshio

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Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm von Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.

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Analysis of Phase Shift Tolerance in a Coherent OCDM System Using FBG Phase En/Decoders von MORITOMO, Renichi, NAKAMURA, Tomoaki, KOTANI, Yasuhiro, OSHIBA, Saeko

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Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films von Mine, Toshiyuki, Fujisaki, Koji, Ishida, Takeshi, Shimamoto, Yasuhiro, Yamada, Renichi, Torii, Kazuyoshi

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Analysis of Phase Shift Tolerance in a Coherent OCDM System Using FBG Phase En/Decoders : Next generation broadbande access technologies von MORITOMO, Renichi, NAKAMURA, Tomoaki, KOTANI, Yasuhiro, OSHIBA, Saeko

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Display device von MITSUHASHI RENICHI

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