Structural TEM study of nonpolar a-plane gallium nitride grown on (11 20) 4H-SiC by organometallic vapor phase epitaxy von ZAKHAROV, Dmitri N, LILIENTAL-WEBER, Zuzanna, WAGNER, Brian, REITMEIER, Zachary J, PREBLE, Edward A, DAVIS, Robert F

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A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems von Lee, Keon Jae, Lee, Jaeseob, Hwang, Heedon, Reitmeier, Zachary J., Davis, Robert F., Rogers, John A., Nuzzo, Ralph G.

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Effect of Carrier Blocking Layers on the Emission Characteristics of AlGaN-based Ultraviolet Light Emitting Diodes von Park, Ji-Soo, Fothergill, Daryl W., Zhang, Xiyao, Reitmeier, Zachary J., Muth, John F., Davis, Robert F.

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Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substrates von Park, Ji-Soo, Reitmeier, Zachary J., Davis, Robert F.

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On the microstructure of AlxGa1−xN layers grown on 6H-SiC(0001) substrates von Kröger, Roland, Einfeldt, Sven, Chierchia, Rosa, Hommel, Detlef, Reitmeier, Zachary J., Davis, Robert F., Liu, Quincy K. K.

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Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0 0 0 1) substrates and the effect of carrier-blocking layers on their emission characteristics von Park, Ji-Soo, Reitmeier, Zachary J., Fothergill, Daryl, Zhang, Xiyao, Muth, John F., Davis, Robert F.

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On the microstructure of Al x Ga 1 − x N layers grown on 6H-SiC(0001) substrates von Kröger, Roland, Einfeldt, Sven, Chierchia, Rosa, Hommel, Detlef, Reitmeier, Zachary J., Davis, Robert F., Liu, Quincy K. K.

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On the microstructure of Al{sub x}Ga{sub 1-x}N layers grown on 6H-SiC(0001) substrates von Kroeger, Roland, Einfeldt, Sven, Chierchia, Rosa, Hommel, Detlef, Reitmeier, Zachary J., Davis, Robert F., Liu, Quincy K.K., Department of Materials Science and Engineering, North Carolina State University, Box 7919, Raleigh, North Carolina 27695, Department for Theoretical Physics, Hahn-Meitner Institute, Glienicker Strasse 100, 14109 Berlin

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Structural TEM study of nonpolar a -plane gallium nitride grown on ( 11 2 ¯ 0 ) 4 H -SiC by organometallic vapor phase epitaxy von Zakharov, Dmitri N., Liliental-Weber, Zuzanna, Wagner, Brian, Reitmeier, Zachary J., Preble, Edward A., Davis, Robert F.

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METHOD FOR FABRICATING AN INK JETTING DEVICE von JOYNER, II BURTON L, REITMEIER ZACHARY J

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