The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps von Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, María Toledano, Nelhiebel, M.

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The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress von Reisinger, H, Grasser, T, Gustin, W, Schlünder, C

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The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters von Feil, Maximilian W., Huerner, Andreas, Puschkarsky, Katja, Schleich, Christian, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans, Grasser, Tibor

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Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies von Schleich, Christian, Waldhoer, Dominic, Waschneck, Katja, Feil, Maximilian W., Reisinger, Hans, Grasser, Tibor, Waltl, Michael

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Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full Bias Space: Implications and Peculiarities von Jech, Markus, Rott, Gunnar, Reisinger, Hans, Tyaginov, Stanislav, Rzepa, Gerhard, Grill, Alexander, Jabs, Dominic, Jungemann, Christoph, Waltl, Michael, Grasser, Tibor

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Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation von Puschkarsky, Katja, Reisinger, Hans, Schlunder, Christian, Gustin, Wolfgang, Grasser, Tibor

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NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark von Grasser, Tibor, Rott, Karina, Reisinger, Hans, Waltl, Michael, Schanovsky, Franz, Kaczer, Ben

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Gate Switching Instability in Silicon Carbide MOSFETs-Part II: Modeling von Grasser, Tibor, Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Waldhoer, Dominic, Vasilev, Aleksandr, Waltl, Michael, Aichinger, Thomas, Bockstedte, Michel, Gustin, Wolfgang, Pobegen, Gregor

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Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental von Ullmann, Bianka, Jech, Markus, Puschkarsky, Katja, Rott, Gunnar Andreas, Waltl, Michael, Illarionov, Yury, Reisinger, Hans, Grasser, Tibor

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Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models von Waschneck, Katja, Schleich, Christian, Waltl, Michael, Hernandez, Yoanlys, Reisinger, Hans, Grasser, Tibor, Stampfer, Bernhard

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Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental von Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Prigann, Sven, Pobegen, Gregor, Salmen, Paul, Rescher, Gerald, Waldhoer, Dominic, Vasilev, Aleksandr, Gustin, Wolfgang, Waltl, Michael, Grasser, Tibor

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'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions von Bukhori, Muhammad Faiz, Grasser, Tibor, Kaczer, Ben, Reisinger, Hans, Asenov, Asen

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On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs von Waschneck, Katja, Salmen, Paul, Feil, Maximilian Wolfgang, Gustin, Wolfgang, Reisinger, Hans, Rescher, Gerald, Grasser, Tibor, Aichinger, Thomas

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Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors von Grasser, Tibor, Reisinger, Hans, Wagner, Paul-Jürgen, Kaczer, Ben

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Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs von Feil, Maximilian W., Weger, Magdalena, Reisinger, Hans, Aichinger, Thomas, Kabakow, André, Waldhör, Dominic, Jakowetz, Andreas C., Prigann, Sven, Pobegen, Gregor, Gustin, Wolfgang, Waltl, Michael, Bockstedte, Michel, Grasser, Tibor

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Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs von Illarionov, Yury, Bina, Markus, Tyaginov, Stanislav, Rott, Karina, Kaczer, Ben, Reisinger, Hans, Grasser, Tibor

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Degradation and recovery of variability due to BTI von Schlünder, Christian, Berthold, Jörg, Proebster, Fabian, Martin, Andreas, Gustin, Wolfgang, Reisinger, Hans

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Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors von Feil, Maximilian W., Reisinger, Hans, Kabakow, André, Aichinger, Thomas, Schleich, Christian, Vasilev, Aleksandr, Waldhör, Dominic, Waltl, Michael, Gustin, Wolfgang, Grasser, Tibor

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Understanding and modeling AC BTI von Reisinger, Hans, Grasser, Tibor, Ermisch, Karsten, Nielen, Heiko, Gustin, Wolfgang, Schlunder, Christian

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Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors von ROTT, Gunnar Andreas, ROTT, Karina, REISINGER, Hans, GUSTIN, Wolfgang, GRASSER, Tibor

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