Humidity-induced plasticization and antiplasticization of polyamide 6: A positron lifetime study of the local free volume von Dlubek, G., Redmann, F., Krause-Rehberg, R.

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Vacancy formation in GaAs under different equilibrium conditions von Bondarenko, V., Gebauer, J., Redmann, F., Krause-Rehberg, R.

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Positron study of electron irradiation-induced vacancy defects in SiC von Kawasuso, A., Yoshikawa, M., Itoh, H., Krause-Rehberg, R., Redmann, F., Higuchi, T., Betsuyaku, K.

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Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2 von Krause-Rehberg, R., Börner, F., Redmann, F.

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Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC von KAWASUSO, A, YOSHIKAWA, M, ITOH, H, CHIBA, T, HIGUCHI, T, BETSUYAKU, K, REDMANN, F, KRAUSE-REHBERG, R

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Interdiffusion in a particle matrix system of two miscible polymers: An investigation by positron annihilation lifetime spectroscopy and differential scanning calorimetry von Dlubek, G., Taesler, C., Pompe, G., Pionteck, J., Petters, K., Redmann, F., Krause-Rehberg, R.

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Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures? von Gebauer, J., Zhao, R., Specht, P., Weber, E. R., Börner, F., Redmann, F., Krause-Rehberg, R.

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Improved defect profiling with slow positrons von Krause-Rehberg, R, Börner, F, Redmann, F, Egger, W, Kögel, G, Sperr, P, Triftshäuser, W

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Subsurface Zones in Steel Samples Studied by Means of Positron Annihilation von Dryzek, J, Dryzek, E, Krause-Rehberg, R, Redmann, F

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Identification of getter defects in high-energy self-implanted silicon at Rp/2 von Krause-Rehberg, R., Börner, F., Redmann, F., Gebauer, J., Kögler, R., Kliemann, R., Skorupa, W., Egger, W., Kögel, G., Triftshäuser, W.

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Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation von Kawasuso, A., Weidner, M., Redmann, F., Frank, T., Sperr, P., Krause-Rehberg, R., Triftshäuser, W., Pensl, G.

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Vacancy Formation in GaAs under Different Equilibrium Conditions von Krause-Rehberg, Reinhard, Gebauer, J., Redmann, F., Bondarenko, V.

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Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy von Redmann, F., Kawasuso, A., Petters, K., Itoh, H., Krause-Rehberg, R.

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Positron Beam Studies of Defects in Semiconductors von Redmann, F., Börner, F., Krause-Rehberg, Reinhard

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Positron Annihilation Due to Silicon Vacancies in 3C and 6H SiC Epitaxial Layers Induced by 1 MeV Electron Irradiation von Kawasuso, A., Redmann, F., Krause-Rehberg, R., Yoshikawa, M., Kojima, K., Itoh, H.

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Influence of stoichiometry and doping on vacancies in n-type GaAs von Gebauer, J, Lausmann, M, Redmann, F, Krause-Rehberg, R

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Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation von Kawasuso, Atsuo, Pensl, Gerhard, Krause-Rehberg, Reinhard, Yoshikawa, Masahito, Redmann, F., Maekawa, Masaki, Frank, Thomas, Itoh, Hisayoshi, Chiba, Toshinobu, Weidner, Michael

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Native point defects in non-stoichiometric GaAs doped with beryllium von Gebauer, J., Zhao, R., Specht, P., Börner, F., Redmann, F., Krause-Rehberg, R., Weber, E.R.

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Detailed Microscopic Defect Identification in GaAs von Krause-Rehberg, Reinhard, Staab, T.E.M., Gebauer, J., Redmann, F.

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Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC von Kawasuso, Atsuo, Krause-Rehberg, Reinhard, Redmann, F., Petters, Konrad, Itoh, Hisayoshi

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