Identifying and abating copper foil impurities to optimize graphene growth von Reckinger, N., Hackens, B.

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Do CVD grown graphene films have antibacterial activity on metallic substrates? von Dellieu, L., Lawarée, E., Reckinger, N., Didembourg, C., Letesson, J.-J., Sarrazin, M., Deparis, O., Matroule, J.-Y., Colomer, J.-F.

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Probing plasma fluorinated graphene via spectromicroscopy von Struzzi, C, Scardamaglia, M, Reckinger, N, Sezen, H, Amati, M, Gregoratti, L, Colomer, J-F, Ewels, C, Snyders, R, Bittencourt, C

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Fluorine and sulfur simultaneously co-doped suspended graphene von Struzzi, C., Sezen, H., Amati, M., Gregoratti, L., Reckinger, N., Colomer, J.-F., Snyders, R., Bittencourt, C., Scardamaglia, M.

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Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane von Duţu, C. A., Vlad, A., Reckinger, N., Flandre, D., Raskin, J.-P., Melinte, S.

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A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM von Xiaohui Tang, Bayot, V., Reckinger, N., Flandre, D., Raskin, J.-P., Dubois, E., Nysten, B.

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Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species von Scardamaglia, M., Aleman, B., Amati, M., Ewels, C., Pochet, P., Reckinger, N., Colomer, J.-F., Skaltsas, T., Tagmatarchis, N., Snyders, R., Gregoratti, L., Bittencourt, C.

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Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer von Reckinger, N., Duţu, C.A., Tang, X., Dubois, E., Yarekha, D.A., Godey, S., Nougaret, L., Łaszcz, A., Ratajczak, J., Raskin, J.-P.

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Process Optimization and Downscaling of a Single-Electron Single Dot Memory von Krzeminski, C., Xiaohui Tang, Reckinger, N., Bayot, V., Dubois, E.

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Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance von Larrieu, G., Dubois, E., Yarekha, D., Breil, N., Reckinger, N., Tang, X., Ratajczak, J., Laszcz, A.

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The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition von Reckinger, Nicolas, Felten, Alexandre, Santos, Cristiane N., Hackens, Benoît, Colomer, Jean-François

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Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications von RATAJCZAK, J, ŁASZCZ, A, CZERWINSKI, A, KĄTCKI, J, PHILLIPP, F, VAN AKEN, P.A, RECKINGER, N, DUBOIS, E

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Very low Schottky barrier to n-type silicon with PtEr-stack silicide von Tang, Xiaohui, Katcki, J., Dubois, E., Reckinger, N., Ratajczak, J., Larrieu, G., Loumaye, P., Nisole, O., Bayot, V.

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L'alimentation au fil des saisons: La saisonnalité des pratiques alimentaires von Adamiec, Camille, Julien, Marie-Pierre, Regnier, Faustine

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Characterization of ytterbium silicide formed in ultra high vacuum von Łaszcz, A, Ratajczak, J, Czerwinski, A, Kątcki, J, Srot, V, Phillipp, F, Aken, P A van, Yarekha, D, Reckinger, N, Larrieu, G, Dubois, E

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Probing plasma fluorinated graphene via spectromicroscopyElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cp05305c von Struzzi, C, Scardamaglia, M, Reckinger, N, Sezen, H, Amati, M, Gregoratti, L, Colomer, J.-F, Ewels, C, Snyders, R, Bittencourt, C

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Fabrication and Room-Temperature Single-Charging Behavior of Self-Aligned Single-Dot Memory Devices von Xiaohui Tang, Reckinger, N., Bayot, V., Krzeminski, C., Dubois, E., Villaret, A., Bensahel, D.-C.

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Identifying and abating copper foil impurities to optimize graphene growth von Reckinger, N, Hackens, B

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A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature von Pascual, E., Rengel, R., Reckinger, N., Tang, X., Bayot, V., Dubois, E., Martín, M. J.

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Le terroir viticole: Espace et figures de qualité von Stengel, Kilien, Yengué, Jean-Louis

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