Will Kleber (1906-1970) - forerunner of modern crystallography at Humboldt University of Berlin von Meyer, K., Rechenberg, I., Däweritz, L.

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Scapular motion in the presence of rotator cuff tears: a systematic review von Barcia, Anthony M., Makovicka, Justin L., Spenciner, David B., Chamberlain, Aaron M., Jacofsky, Marc C., Gabriel, Stefan M., Moroder, Philipp, von Rechenberg, Brigitte, Sengun, Mehmet Z., Tokish, John M.

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Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm von Bugge, F, Zeimer, U, Gramlich, S, Rechenberg, I, Sebastian, J, Erbert, G, Weyers, M

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On the performance assessment and comparison of stochastic multiobjective optimizers von Fonseca, Carlos M., Fleming, Peter J.

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Facet degradation of high-power diode laser arrays von TOMM, J. W, THAMM, E, BÄRWOLFF, A, ELSAESSER, T, LUFT, J, BAEUMLER, M, MUELLER, S, JANTZ, W, RECHENBERG, I, ERBERT, G

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Comparison of binary and ternary growth over trenches using MOVPE von Hofmann, L, Knauer, A, Rechenberg, I, Zeimer, U, Weyers, M

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Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes von Rechenberg, I, Klehr, A, Richter, U, Erfurth, W, Bugge, F, Klein, A

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Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy von Hofmann, L, Knauer, A, Rechenberg, I, Weyers, M, Stolz, W

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Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE von BRUNNER, F, RICHTER, E, WEYERS, M, BERGUNDE, T, RECHENBERG, I, BHATTACHARYA, A, MAASSDORF, A, TOMM, J. W, KURPAS, P, ACHOUCHE, M, WÜRFL, J

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Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE) von Hofmann, L., Knauer, A., Rechenberg, I., Weyers, M.

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The Completion of Quantum Mechanics 1926–1941 von Mehra, Jagdish, Rechenberg, Helmut

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MOVPE growth of AlGaAs/GaInP diode lasers von Bugge, F., Knauer, A., Gramlich, S., Rechenberg, I., Beister, G., Sebastian, J., Wenzel, H., Erbert, G., Weyers, M.

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{110} and {111} Ordering in MOVPE-grown (Ga,In)P on (001) GaAs Substrates at Low Temperature von Hähnert, I., Knauer, A., Schneider, R., Rechenberg, I., Klein, A., Neumann, W.

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Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-grown (Ga,In)(As,P)/GaAs von KNAUER, A, RECHENBERG, I, BUGGE, F, GRAMLICH, S, OELGARDT, G, OSTER, A, WEYERS, M

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From recombination of genes to the estimation of distributions I. Binary parameters von Mühlenbein, H., Paaß, G.

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Case studies in evolutionary experimentation and computation: Genetic and evolutionary computation von RECHENBERG, I

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Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy von Richter, E., Gramlich, S., Klein, A., Nebauer, E., Rechenberg, I., Zeimer, U., Weyers, M.

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AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique von Procop, M., Klein, A., Rechenberg, I., Krüger, D.

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Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers von Bugge, F., Beister, G., Erbert, G., Gramlich, S., Rechenberg, I., Treptow, H., Weyers, M.

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Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth [formula omitted] von Knauer, A., Rechenberg, I., Bugge, F., Gramlich, S., Oelgardt, G., Oster, A., Weyers, M.

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