Method of manufacturing VDMOS transistors von REBOLLO PALACIOS JOSE ANDRES, MONTSERRAT MARTI JOSEP, FERNANDEZ GARCIA JUAN, FARRES BERENGUER ESTEVE, VELLVEHI HERNANDEZ MIQUEL, CABRUJA CASAS ENRIC

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METODO DE FABRICACION DE TRANSISTORES VDMOS von REBOLLO PALACIOS JOSE ANDRES, MONTSERRAT MARTI JOSEP, FERNANDEZ GARCIA JUAN, FARRES BERENGUER ESTEVE, VELLVEHI HERNANDEZ MIQUEL, CABRUJA CASAS ENRIC

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First-principles study of n-type dopants and their clustering in SiC von Rurali, Riccardo, Godignon, Philippe, Rebollo Palacios, José Andrés, Hernández, Eduardo R, Ordejon, Pablo, American Physical Society

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First-principles study of n-type dopants and their clustering in SiC von Rurali, Riccardo, Godignon, Philippe, Rebollo Palacios, José Andrés, Hernández, Eduardo R, Ordejon, Pablo, American Physical Society

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Theoretical evidence for the kick-out mechanism for B diffusion in SiC von Rurali, Riccardo, Godignon, Philippe, Rebollo Palacios, José Andrés, Ordejon, Pablo, Hernández, Eduardo R, American Physical Society

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Theoretical evidence for the kick-out mechanism for B diffusion in SiC von Rurali, Riccardo, Godignon, Philippe, Rebollo Palacios, José Andrés, Ordejon, Pablo, Hernández, Eduardo R, American Physical Society

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