Single G centers in silicon fabricated by co-implantation with carbon and proton von Baron, Yoann, Durand, Alrik, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Reboh, Shay, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs

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Unraveling structural and compositional information in 3D FinFET electronic devices von Trombini, Henrique, Marmitt, Gabriel Guterres, Alencar, Igor, Baptista, Daniel Lorscheitter, Reboh, Shay, Mazen, Frédéric, Pinheiro, Rafael Bortolin, Sanchez, Dario Ferreira, Senna, Carlos Alberto, Archanjo, Bráulio Soares, Achete, Carlos Alberto, Grande, Pedro Luis

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Dynamic scattering theory for dark-field electron holography of 3D strain fields von Lubk, Axel, Javon, Elsa, Cherkashin, Nikolay, Reboh, Shay, Gatel, Christophe, Hÿtch, Martin

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Strain evolution of SiGe-on-insulator obtained by the Ge-condensation technique von Boureau, Victor, Reboh, Shay, Benoit, Daniel, Hÿtch, Martin, Claverie, Alain

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Strain mapping in layers and devices by electron holography von Hytch, Martin, Cherkashin, Nikolay, Reboh, Shay, Houdellier, Florent, Claverie, Alain

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Strain in Hydrogen-Implanted Si Investigated Using Dark-Field Electron Holography von Cherkashin, Nikolay, Reboh, Shay, Lubk, Axel, Hÿtch, Martin J, Claverie, Alain

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Genuine and faux single G centers in carbon-implanted silicon von Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Shay Reboh, Abbarchi, Marco, Robert-Philip, Isabelle, Jean-Michel, Gérard, Vincent, Jacques, Cassabois, Guillaume, Dréau, Anaïs

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Purcell enhancement of silicon W centers in circular Bragg grating cavities von Lefaucher, Baptiste, Jager, Jean-Baptiste, Calvo, Vincent, Cache, Félix, Durand, Alrik, Vincent, Jacques, Robert-Philip, Isabelle, Cassabois, Guillaume, Baron, Yoann, Mazen, Frédéric, Kerdilès, Sébastien, Shay Reboh, Dréau, Anaïs, Jean-Michel, Gérard

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Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices von Bordignon, Thomas, Duriez, Blandine, Guitard, Nicolas, Duru, Romain, Pribat, Clément, Richy, Jérôme, Reboh, Shay, Dhar, Siddhartha, Monsieur, Frédéric, Fache, Thibaud, Chalupa, Zdenek, Hartmann, Jean-Michel, Chevalier, Pascal, Roelens, Yannick, Danneville, François, Crémer, Sébastien

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Purcell Enhancement of Silicon W Centers in Circular Bragg Grating Cavities von Lefaucher, Baptiste, Jager, Jean-Baptiste, Calvo, Vincent, Cache, Félix, Durand, Alrik, Jacques, Vincent, Robert-Philip, Isabelle, Cassabois, Guillaume, Baron, Yoann, Mazen, Frédéric, Kerdilès, Sébastien, Reboh, Shay, Dréau, Anaïs, Gérard, Jean-Michel

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Single G centers in silicon fabricated by co-implantation with carbon and proton von Baron, Yoann, Durand, Alrik, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Shay Reboh, Jean-Michel, Gérard, Vincent, Jacques, Cassabois, Guillaume, Dréau, Anaïs

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Dynamical effects in strain measurements by dark-field electron holography von Javon, E., Lubk, A., Cours, R., Reboh, S., Cherkashin, N., Houdellier, F., Gatel, C., Hÿtch, M.J.

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Effect of H-implantation in the local elastic properties of silicon crystals von Reboh, S, Rieutord, F, Vignoud, L, Mazen, F, Cherkashin, N, Zussy, M, Landru, D, Deguet, C

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Development of microcracks in hydrogen-implanted silicon substrates von Penot, Jean-Daniel, Massy, Damien, Rieutord, François, Mazen, Frederic, Reboh, Shay, Madeira, Florence, Capello, Luciana, Landru, Didier, Kononchuk, Oleg

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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy von Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

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Genuine and faux single G centers in carbon-implanted silicon von Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs

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(Keynote) Low Temperature SmartCutTM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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(Keynote) Low Temperature SmartCut TM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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Low-temperature method for transfer and healing of a semiconductor layer von Reboh, Shay

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Method for fabricating a doped region of a microelectronic device von Reboh, Shay

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