Deep GaN etching by inductively coupled plasma and induced surface defects von Ladroue, J., Meritan, A., Boufnichel, M., Lefaucheux, P., Ranson, P., Dussart, R.

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Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches von Kafrouni, W., Tillocher, T., Ladroue, J., Lefaucheux, P., Boufnichel, M., Ranson, P., Dussart, R.

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How are topics selected and prioritized by the national institute of health and care excellence (nice) and what might be the options if a technology is not selected? von Ranson, P, Cline, H, Hill, C.A, Hill, C.E, Marshall, J.D, Harries, M

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Implementation Of Nice Clinical Guidelines (Cg) – What Can Be Learned From A Uk Case Study And How To Ensure That Health Services Do Not Fall Short Of Their Obligations von Ranson, P, Cline, H, Hill, C.A, Hill, C.E, Marshall, J.D, Harries, M

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Will flat EU Pricing become a reality? considerations for the Biopharma industry and whether future EU pricing transparency rules will affect the Current position von Ranson, P, Hill, C.A, Cline, H, Hill, C.E, Marshall, J.D, Harries, M

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Silicon columnar microstructures induced by an SF6/O2 plasma von Dussart, R, Mellhaoui, X, Tillocher, T, Lefaucheux, P, Volatier, M, Socquet-Clerc, C, Brault, P, Ranson, P

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Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects von Tillocher, T, Kafrouni, W, Ladroue, J, Lefaucheux, P, Boufnichel, M, Ranson, P, Dussart, R

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Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing von Boufnichel, M., Aachboun, S., Grangeon, F., Lefaucheux, P., Ranson, P.

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A novel amorphization-etch alternating process for Si(1 0 0) von Mekkakia-Maaza, N, Dussart, R, Tillocher, T, Lefaucheux, P, Ranson, P

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Traumatologie aiguë du badminton : étude épidémiologique à propos de 140 cas von Saragaglia, D., Saliba-Ranson, P., Banihachemi, J.J.

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The passivation layer formation in the cryo-etching plasma process von Dussart, R., Mellhaoui, X., Tillocher, T., Lefaucheux, P., Boufnichel, M., Ranson, P.

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Deep anisotropic etching of silicon von Aachboun, S., Ranson, P.

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Integrated micro-plasmas in silicon operating in helium von Dussart, R., Overzet, L. J., Lefaucheux, P., Dufour, T., Kulsreshath, M., Mandra, M. A., Tillocher, T., Aubry, O., Dozias, S., Ranson, P., Lee, J. B., Goeckner, M.

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The various phases of the system Sr1-xCaxTiO3-A Raman scattering study von Ranson, P., Ouillon, R., Pinan-Lucarre, J.-P., Pruzan, Ph, Mishra, S. K., Ranjan, R., Pandey, D.

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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition von Marcos, G., Rhallabi, A., Ranson, P.

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Passivation mechanisms in cryogenic SF6/O2 etching process von Dussart, R, Boufnichel, M, Marcos, G, Lefaucheux, P, Basillais, A, Benoit, R, Tillocher, T, Mellhaoui, X, Estrade-Szwarckopf, H, Ranson, P

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Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process von Boufnichel, M., Lefaucheux, P., Aachboun, S., Dussart, R., Ranson, P.

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Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O2 plasma mixture von Marcos, G., Rhallabi, A., Ranson, P.

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Experimental study and simulation of a micro-discharge with limited cathode area von Dufour, T., Overzet, L. J., Dussart, R., Pitchford, L. C., Sadeghi, N., Lefaucheux, P., Kulsreshath, M., Ranson, P.

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Raman and infrared investigations at room temperature of the internal modes behaviour in solid nitromethane-h3 and -d3 up to 45 GPa von Ouillon, R., Pinan-Lucarré, J.-P., Canny, B., Pruzan, P., Ranson, P.

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