Spin injection from Heusler alloys into semiconductors: A materials perspective von Farshchi, R., Ramsteiner, M.

Volltext

Resonant electronic Raman scattering from Ir4+ ions in β-Ga2O3 von Seyidov, Palvan, Ramsteiner, Manfred, Galazka, Zbigniew, Irmscher, Klaus

Volltext

Raman scattering in heavily donor doped β-Ga2O3 von Fiedler, A., Ramsteiner, M., Galazka, Z., Irmscher, K.

Volltext

Optical communication of spin information between light emitting diodes von Farshchi, R., Ramsteiner, M., Herfort, J., Tahraoui, A., Grahn, H. T.

Volltext

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy von Feldl, J., Budde, M., Tschammer, C., Bierwagen, O., Ramsteiner, M.

Volltext

SnO/β-Ga2O3 vertical pn heterojunction diodes von Budde, Melanie, Splith, Daniel, Mazzolini, Piero, Tahraoui, Abbes, Feldl, Johannes, Ramsteiner, Manfred, von Wenckstern, Holger, Grundmann, Marius, Bierwagen, Oliver

Volltext

Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO von Windsor, Y W, Zahn, D, Kamrla, R, Feldl, J, Seiler, H, Chiang, C-T, Ramsteiner, M, Widdra, W, Ernstorfer, R, Rettig, L

Volltext

Comparative study of electrical properties of chalcogenide films produced by reaction of Cu, Ag, Ni and NiCu with Sb2S3 in hot wall epitaxy von Takagaki, Y., Hanke, M., Ramsteiner, M., Lähnemann, J.

Volltext

Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag and Ni for chalcogenides Bi-M-S von Takagaki, Y., Jenichen, B., Ramsteiner, M., Herfort, J.

Volltext

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111) von Auzelle, T, Oliva, M, John, P, Ramsteiner, M, Trampert, A, Geelhaar, L, Brandt, O

Volltext

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys von Takagaki, Y., Jenichen, B., Ramsteiner, M., Trampert, A.

Volltext

Surfactant-Induced Alterations of Epitaxial Orientation in β‑In2S3 Layers on InP von Takagaki, Yukihiko, Hanke, Michael, Ramsteiner, Manfred

Volltext

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy von Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., Riechert, H.

Volltext

Surfactant-Induced Alterations of Epitaxial Orientation in β-In 2 S 3 Layers on InP von Takagaki, Yukihiko, Hanke, Michael, Ramsteiner, Manfred

Volltext

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence von Fernández-Garrido, S, Kaganer, V M, Hauswald, C, Jenichen, B, Ramsteiner, M, Consonni, V, Geelhaar, L, Brandt, O

Volltext

Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates von Dimakis, Emmanouil, Jahn, Uwe, Ramsteiner, Manfred, Tahraoui, Abbes, Grandal, Javier, Kong, Xiang, Marquardt, Oliver, Trampert, Achim, Riechert, Henning, Geelhaar, Lutz

Volltext

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy von Ruhstorfer, Daniel, Mejia, Simon, Ramsteiner, Manfred, Döblinger, Markus, Riedl, Hubert, Finley, Jonathan J., Koblmüller, Gregor

Volltext

p‑Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements von Kamimura, Jumpei, Bogdanoff, Peter, Ramsteiner, Manfred, Corfdir, Pierre, Feix, Felix, Geelhaar, Lutz, Riechert, Henning

Volltext

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils von Calabrese, G, Pettersen, S V, Pfüller, C, Ramsteiner, M, Grepstad, J K, Brandt, O, Geelhaar, L, Fernández-Garrido, S

Volltext

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration von Bruski, P., Manzke, Y., Farshchi, R., Brandt, O., Herfort, J., Ramsteiner, M.

Volltext