Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis von Rai, Raghaw S., Subramanian, Swaminathan

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Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 von Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.

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Fermi-level pinning at the polysilicon/metal oxide interface-Part I von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

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Beware of Artifacts When Characterizing Nanometer Device Features Smaller than a TEM Lamella Thickness in Semiconductor Wafer-foundries von Zhao, Wayne, Porter, Hugh, Rai, Raghaw, Chen, Esther (PY), Russell, Jeremy

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Fermi-level pinning at the polysilicon/metal-oxide interface-Part II von Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

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Ferroelectric Domain Structure of Lanthanum-Modified Lead Titanate Ceramics von Demczyk, Brain G., Rai, Raghaw S., Thomas, Gareth

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Effect of lead acetate in the preparation of the Lindlar catalyst von Ulan, Judith G, Kuo, Emilio, Maier, Wilhelm F, Rai, Raghaw S, Thomas, Gareth

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Surface and interface roughness of ultrathin nitric oxide oxynitride gate dielectric von HEGDE, R. I, MAITI, B, RAI, R. S, REID, K. G, TOBIN, P. J

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Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs von Shi, Zhonghai, Onsongo, David, Rai, Raghaw, Samavedam, Srikanth B., Banerjee, Sanjay K.

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Metamorphosis of palladium and its relation to selectivity in the Rosenmund reaction von Maier, Wilhelm F, Chettle, Susan J, Rai, Raghaw S, Thomas, Gareth

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Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics von KUKLI, Kaupo, RITALA, Mikko, LESKELÄ, Markku, SAJAVAARA, Timo, KEINONEN, Juhani, GILMER, David C, HEGDE, Rama, RAI, Raghaw, PRABHU, Lata

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Atomic layer deposition of HfO[2 thin films and nanolayered HfO[2-Al[2O[3-Nb[2O[5 dielectrics von Kukli, Kaupo, Ritala, Mikko, Leskela, Markku, Sajavaara, Timo, Keinonen, Juhani, Gilmer, David C, Hegde, Rama, Rai, Raghaw, Prabhu, Lata

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Atomic layer deposition of HfO sub(2) thin films and nanolayered HfO sub(2)-Al sub(2)O sub(3)-Nb sub(2)O sub(5) dielectrics von Kukli, Kaupo, Ritala, Mikko, Leskelae, Markku, Sajavaara, Timo, Keinonen, Juhani, Gilmer, David C, Hegde, Rama, Rai, Raghaw, Prabhu, Lata

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Specific site cross-sectional sample preparation using focused ion beam for transmission electron microscopy von Schraub, David M., Rai, Raghaw S.

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Crystallization Behavior of a Glass in the Y2O3-SiO2-AlN System von DINGER, TIMOTHY R., RAI, RAGHAW S., THOMAS, GARETH

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Characterizing III–V heteroepitaxial structures von Rai, Raghaw S., Parsons, Craig A.

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Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method von RAI RAGHAW S, NOBLE ROSS E, MATHEW LEO

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Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method von Mathew, Leo, Noble, Ross E, Rai, Raghaw S

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Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration von Srivastava, Anadi, Hall, Mark D, Rai, Raghaw S, Yanez, Jesse

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Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration von SRIVASTAVA ANADI, RAI RAGHAW S, HALL MARK D, YANEZ JESSE

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