Magnetron sputtering process control by medium-frequency power supply parameter von Posadowski, W.M., Wiatrowski, A., Dora, J., Radzimski, Z.J.

Volltext

Pulsed-DC selfsputtering of copper von Wiatrowski, A, Posadowski, W M, Radzimski, Z J

Volltext

Low temperature Si epitaxy in a vertical LPCVD batch reactor von Ritter, G, Harrington, J., Tillack, B., Morgenstern, Th, Dietze, G.R., Radzimski, Z.J.

Volltext

Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique von BUCZKOWSKI, A, RADZIMSKI, Z. J, ROZGONYI, G. A, SHIMURA, F

Volltext

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon von BROWN, R. A, KONONCHUK, O, BONDARENKO, I, ROMANOWSKI, A, RADZIMSKI, Z, ROZGONYI, G. A, GONZALEZ, F

Volltext

Bias dependent contrast mechanisms in EBIC images of MOS capacitors von KIRK, H. R, RADZIMSKI, Z, ROMANOWSKI, A, ROZGONYI, G. A

Volltext

Pulsed dc self-sustained magnetron sputtering von Wiatrowski, A., Posadowski, W. M., Radzimski, Z. J.

Volltext

Bulk and surface components of recombination lifetime based on a two-laser microwave reflection technique von BUCZKOWSKI, A, RADZIMSKI, Z. J, ROZGONYI, G. A, SHIMURA, F

Volltext

Recombination at clean and decorated misfit dislocations von RADZIMSKI, Z. J, ZHOU, T. Q, BUCZKOWSKI, A, ROZGONYI, G. A, FINN, D, HELLWIG, L. G, ROSS, J. A

Volltext

Noncontact energy level analysis of metallic impurities in silicon crystals von KIRINO, Y, BUCZKOWSKI, A, RADZIMSKI, Z. J, ROZGONYI, G. A, SHIMURA, F

Volltext

Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers von Koveshnikov, Sergei V., Radzimski, Zbigniew J., Ling, Li, Ravi, K.V., Beauchaine, David

Volltext

Two classes of recombination behavior as studied by the technique of the electron beam induced current : NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon von KITTLER, M, SEIFERT, W, RADZIMSKI, Z. J

Volltext

The effect of bonded interface on electrical properties of bonded silicon-on-insulator wafers von LING, L, RADZIMSKI, Z. J, ABE, T, SHIMURA, F

Volltext

Gettering of Fe to below 1010 cm−3 in MeV self-implanted Czochralski and float zone silicon von Kononchuk, O., Brown, R. A., Radzimski, Z., Rozgonyi, G. A., Gonzalez, F.

Volltext

Electrical activity of dislocations: Prospects for practical utilization von Radzimski, Z. J., Zhou, T. Q., Buczkowski, A. B., Rozgonyi, G. A.

Volltext

Low temperature identification of interfacial and bulk defects in Al/SiO/sub 2//Si capacitor structures by electron beam induced current von Kirk, H.R., Radzimski, Z., Buczkowski, A., Rozgonyi, C.A.

Volltext

The effect of oxygen on secondary defect formation in MeV self-implanted silicon von Brown, R.A., Kononchuk, O., Radzimski, Z., Rozgonyi, G.A., Gonzalez, F.

Volltext

Low temperature identification of interfacial and bulk defects in Al/SiO2/Si capacitor structures by electron beam induced current von KIRK, H. R, RADZIMSKI, Z, BUCZKOWSKI, A, ROZGONYI, G. A

Volltext

Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructures von ZHOU, T. Q, BUCZKOWSKI, A, RADZIMSKI, Z. J, ROZGONYI, G. A

Volltext

Conductivity-type conversion in multiple-implant/multiple-anneal SOI von Buczkowski, A., Radzimski, Z.J., Rozgonyi, G.A.

Volltext