Modeling the optical dielectric function of semiconductors : extension of the critical-point parabolic-band approximation von KIM, C. C, GARLAND, J. W, ABAD, RACCAH, P. M

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Line shape of the optical dielectric function von GARLAND, J. W, ABAD, H, VICCARO, M, RACCAH, P. M

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Determination of accurate critical-point energies, linewidths and line shapes from spectroscopic ellipsometry data von Garland, J.W., Kim, Charles C., Abad, H., Raccah, P.M.

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Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates von SHAH, S. I, GREENE, J. E, ABELS, L. L, QI YAO, RACCAH, P. M

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Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs von KASSEL, L, ABAD, H, GARLAND, J. W, RACCAH, P. M, POTTS, J. E, HAASE, M. A, CHENG, H

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The improvement of phase modulated spectroscopic ellipsometry von Kim, Charles C., Raccah, P. M., Garland, J. W.

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Electron beam electroreflectance studies of GaAs and CdTe surfaces von RACCAH, P. M, GARLAND, J. W, BUTTRILL, S. E. JR, FRANCKE, L, JACKSON, J

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Optical investigation of hole and electron subbands in HgTe-CdTe superlattices von OLEGO, D. J, FAURIE, J. P, RACCAH, P. M

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Interfacial properties of InP and phosphorus deposited at low temperature von SCHACHTER, R, OLEGO, D. J, BAUMANN, J. A, BUNZ, L. A, RACCAH, P. M, SPICER, W. E

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Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures von YANG, D, GARLAND, J. W, RACCAH, P. M, COLUZZA, C, FRANKL, P, CAPIZZI, M, CHAMBERS, F, DEVANE, G

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The microscopic structure of bulk amorphous red phosphorus: A Raman scattering investigation von Olego, D.J., Baumann, J.A., Kuck, M.A., Schachter, R., Michel, C.G., Raccah, P.M.

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Minority carrier diffusion length measurements in CdTe by a photocurrent technique von Lastras-Martínez, A., Raccah, P. M., Triboulet, R.

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Electroreflectance determination of the band profile of ZnSe/n+ GaAs heterojunction von Kassel, L, Garland, J W, Raccah, P M, Tamargo, M C, Farrell, H H

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Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structures von Yang, D., Garland, J.W., Raccah, P.M., Coluzza, C., Frankl, P., Capizzi, M., Chambers, F., Devane, G.

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Semiconductor properties of polyphosphides von SCHACHTER, R, MICHEL, C. G, KUCK, M. A, BAUMANN, J. A, OLEGO, D. J, POLGAR, L. G, RACCAH, P. M, SPICER, W. E

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Study of mercury cadmium telluride epilayers grown by metalorganic vapor-phase epitaxy von Raccah, P. M., Garland, J. W., Zhang, Z., Lee, U., Ugur, S., Mioc, S., Ghandi, S. K., Bhat, I.

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Measurements of submicron hole diffusion lengths in GaAs by a photovoltaic technique von Dorantes-Dávila, J., Lastras-Martínez, A., Raccah, P. M.

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Modeling the optical dielectric function of the alloy system AlxGa1-xAs von KIM, C. C, GARLAND, J. W, RACCAH, P. M

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Optical and conductivity measurements on MoO3:H von DA FROTA, H. O, PANEPUCCI, H, CRUZ-OREA, A, ROMERO COSS, E. A, RACCAH, P. M, SANCHEZ-SINENCIO, F, HELMAN, J. S

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The structure of La2CuO4 and LaSrVO4 von Longo, J.M., Raccah, P.M.

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