Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm von Jun Hu, Xiaobin Xin, Xueqing Li, Zhao, J.H., VanMil, B.L., Kok-Keong Lew, Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 von VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P

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Quantum transport in functionalized epitaxial graphene without electrostatic gating von Lock, E.H., Prestigiacomo, J.C., Dev, P., Nath, A., Myers-Ward, R.L., Reinecke, T.L., Gaskill, D.K., Osofsky, M.S.

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm von Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4H-SiC von I. Lekavicius, R.L. Myers-Ward, D.J. Pennachio, J.R. Hajzus, D.K. Gaskill, A.P. Purdy, A.L. Yeats, P.G. Brereton, E.R. Glaser, T.L. Reinecke, S.G. Carter

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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4 H - SiC von Lekavicius, I., Myers-Ward, R.L., Pennachio, D.J., Hajzus, J.R., Gaskill, D.K., Purdy, A.P., Yeats, A.L., Brereton, P.G., Glaser, E.R., Reinecke, T.L., Carter, S.G.

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

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Magnetometry Based on Silicon-Vacancy Centers in Isotopically Purified 4 H - SiC von Lekavicius, I., Carter, S.G., Pennachio, D.J., White, S., Hajzus, J.R., Purdy, A.P., Gaskill, D.K., Yeats, A.L., Myers-Ward, R.L.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC von VanMil, B.L., Lew, K.K., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H 2 and C 3H 8 von VanMil, B.L., Lew, K.-K., Myers-Ward, R.L., Holm, R.T., Gaskill, D.K., Eddy, C.R., Wang, L., Zhao, P.

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Innovative Solutions to Materials Challenges for High-Voltage SiC Power Devices von Gaskill, D. Kurt, Myers-Ward, R.L., Klein, P.B., Mahadik, N.a., Stahlbush, R.E., Eddy, C.R.

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Multi-component response in multilayer graphene revealed through terahertz and infrared magneto-spectroscopy von Ellis, C.T., Stier, A.V., George, D., Tischler, J.G., Glaser, E.R., Myers-Ward, R.L., Tedesco, J.L., Eddy, C.R., Gaskill, D.K., Markelz, A., Cerne, J.

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Basal plane dislocation reduction in nitrogen doped 8° 4H-SiC epilayers von Wheeler, V.D., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Stahlbush, R.E., Gaskill, D.K.

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Structure and defects in multilayer CVD graphene on C-face 6H-SiC von Twigg, M.E., Picard, Y.N., Tedesco, J.L., Myers-Ward, R.L., VanMil, B.L., Eddy, C.R., Gaskill, D.K.

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GHz devices from epitaxial graphene on SiC von Gaskilla, D.K., Moon, J., Tedesco, J.L., Robinson, J.A., Friedman, A.L., Campbell, P.M., Jernigan, G.G., Hite, J., Myers-Ward, R.L., Eddy, C.R., Fanton, M.A.

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Mitigating Issues that Impact 4H-SiC Epitaxy for Reliable Power Electronics von Gaskill, D. K., Myers-Ward, R.L., Wheeler, V.D., Stahlbush, R.S., Mahadik, N.

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