Epidemic management and control through risk-dependent individual contact interventions von Schneider, Tapio, Dunbar, Oliver R A, Wu, Jinlong, Böttcher, Lucas, Burov, Dmitry, Garbuno-Inigo, Alfredo, Wagner, Gregory L, Pei, Sen, Daraio, Chiara, Ferrari, Raffaele, Shaman, Jeffrey

Volltext

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs von Robin, Y., Pristovsek, M., Amano, H., Oehler, F., Oliver, R. A., Humphreys, C. J.

Volltext

Calibration and Uncertainty Quantification of Convective Parameters in an Idealized GCM von Dunbar, Oliver R. A., Garbuno‐Inigo, Alfredo, Schneider, Tapio, Stuart, Andrew M.

Volltext

Epithelial-derived TGF-β1 acts as a pro-viral factor in the lung during influenza A infection von Denney, L, Branchett, W, Gregory, L G, Oliver, R A, Lloyd, C M

Volltext

Parameter Uncertainty Quantification in an Idealized GCM With a Seasonal Cycle von Howland, Michael F., Dunbar, Oliver R. A., Schneider, Tapio

Volltext

Efficiency droop in zincblende InGaN/GaN quantum wells von Dyer, D, Church, S. A, Ahumada-Lazo, R, Kappers, M. J, Halsall, M. P, Parkinson, P, Wallis, D. J, Oliver, R. A, Binks, D. J

Volltext

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures von Badcock, T. J., Ali, M., Zhu, T., Pristovsek, M., Oliver, R. A., Shields, A. J.

Volltext

High‐Dimensional Covariance Estimation From a Small Number of Samples von Vishny, David, Morzfeld, Matthias, Gwirtz, Kyle, Bach, Eviatar, Dunbar, Oliver R. A., Hodyss, Daniel

Volltext

Carrier localization in the vicinity of dislocations in InGaN von Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A.

Volltext

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers von Choi, F. S., Griffiths, J. T., Ren, Chris, Lee, K. B., Zaidi, Z. H., Houston, P. A., Guiney, I., Humphreys, C. J., Oliver, R. A., Wallis, D. J.

Volltext

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures von Hammersley, S., Watson-Parris, D., Dawson, P., Godfrey, M. J., Badcock, T. J., Kappers, M. J., McAleese, C., Oliver, R. A., Humphreys, C. J.

Volltext

Improvement of single photon emission from InGaN QDs embedded in porous micropillars von Springbett, H. P., Jarman, J., Zhu, T., Holmes, M., Arakawa, Y., Oliver, R. A.

Volltext

Online Learning of Entrainment Closures in a Hybrid Machine Learning Parameterization von Christopoulos, Costa, Lopez‐Gomez, Ignacio, Beucler, Tom, Cohen, Yair, Kawczynski, Charles, Dunbar, Oliver R. A., Schneider, Tapio

Volltext

Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES) von Spencer, B. F, Church, S. A, Thompson, P, Cant, D. J. H, Maniyarasu, S, Theodosiou, A, Jones, A. N, Kappers, M. J, Binks, D. J, Oliver, R. A, Higgins, J, Thomas, A. G, Thomson, T, Shard, A. G, Flavell, W. R

Volltext

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem von Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

Volltext

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures von Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

Volltext

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot von Kocher, C. C., Puchtler, T. J., Jarman, J. C., Zhu, T., Wang, T., Nuttall, L., Oliver, R. A., Taylor, R. A.

Volltext

Microstructural origins of localization in InGaN quantum wells von Oliver, R A, Bennett, S E, Zhu, T, Beesley, D J, Kappers, M J, Saxey, D W, Cerezo, A, Humphreys, C J

Volltext

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 von OLIVER, R. A, KAPPERS, M. J, SUMNER, J, DATTA, R, HUMPHREYS, C. J

Volltext

Porous nitride semiconductors reviewed von Griffin, P H, Oliver, R A

Volltext