Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers von Desmaris, V., Rudzinski, M., Rorsman, N., Hageman, P.R., Larsen, P.K., Zirath, H., Rodle, T.C., Jos, H.F.F.

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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates von Rudziński, M., Jezierska, E., Weyher, J. L., Macht, L., Hageman, P. R., Borysiuk, J., Rödle, T. C., Jos, H. F. F., Larsen, P. K.

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Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD von Rudziński, M., Desmaris, V., van Hal, P. A., Weyher, J. L., Hageman, P. R., Dynefors, K., Rödle, T. C., Jos, H. F. F., Zirath, H., Larsen, P. K.

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Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers von Rudziński, M., Hageman, P. R., Grzegorczyk, A. P., Macht, L., Rödle, T. C., Jos, H. F. F., Larsen, P. K.

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Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency von Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Köhler, K., Mikulla, M., Ambacher, O., Harm, L., Lorenzini, M., Rödle, T., Riepe, K., Bellmann, K., Buchheim, C., Goldhahn, R.

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High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material von Syväjärvi, Mikael, Gudjónsson, G., Hallin, Christer, Jos, R., Nilsson, Per Åke, Allerstam, Fredrik, Yakimova, Rositza, Sveinbjörnsson, E.Ö., Rödle, T., Ólafsson, H.Ö.

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CIRCUIT DE SURVEILLANCE POUR LA COMMANDE D'UN MOTEUR ELECTRIQUE EN PARTICULIER D'UN MOTEUR DE TAMBOUR A LINGE von SIMON HELMUT, RODLE MICHAEL

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