Picosecond pulses from a monolithic GaSb-based passive mode-locked laser von Becker, S., Scheuermann, J., Weih, R., Rößner, K., Kistner, C., Koeth, J., Hillbrand, J., Schwarz, B., Kamp, M.

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Frequency comb investigation of monolithic mode-locked GaSb-based laser at 1.7 µm by heterodyne detection von Becker, S, Weih, R, Scheuermann, J, Rößner, K, Kistner, C, Koeth, J, Höfling, S, Kamp, M

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Mid-infrared semiconductor heterostructure lasers for gas sensing applications von Bauer, A, Rößner, K, Lehnhardt, T, Kamp, M, Höfling, S, Worschech, L, Forchel, A

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Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence von Motyka, M., Kudrawiec, R., Misiewicz, J., Hümmer, M., Rößner, K., Lehnhardt, T., Müller, M., Forchel, A.

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Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths von Kudrawiec, R., Motyka, M., Misiewicz, J., Hümmer, M., Rößner, K., Lehnhardt, T., Müller, M., Forchel, A.

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GaSb-based lasers with two-dimensional photonic crystal mirrors von Bauer, A, Müller, M, Lehnhardt, T, Rößner, K, Hümmer, M, Forchel, A

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Highly integrated widely tunable single mode laser with on-chip power control von Müller, M, Lehnhardt, T, Bauer, A, Rößner, K, Hümmer, M, Forchel, A

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Long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers emitting at 2.84 μm von HÜMMER, M, RÖSSNER, K, LEHNHARDT, T, MÜLLER, M, FORCHEL, A, WERNER, R, FISCHER, M, KOETH, J

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Discretely tunable single-mode lasers on GaSb using two-dimensional photonic crystal intracavity mirrors von Bauer, A, Müller, M, Lehnhardt, T, Rößner, K, Hümmer, M, Hofmann, H, Kamp, M, Höfling, S, Forchel, A

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Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm von Rößner, K., Hümmer, M., Benkert, A., Forchel, A.

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DFB laser diodes for sensing applications using photoacoustic spectroscopy von Koeth, J, Fischer, M, Legge, M, Seufert, J, Rössner, K, Groninga, H

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Long wavelength broad area lasers with tilted contacts von MÜLLER, M, BAUER, A, LEHNHARDT, T, ROSSNER, K, HÜMMER, M, FORCHEL, A

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1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm von Härkönen, A., Guina, M., Okhotnikov, O., Rößner, K., Hümmer, M., Lehnhardt, T., Müller, M., Forchel, A., Fischer, M.

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Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm von Lehnhardt, T., Hümmer, M., Rößner, K., Müller, M., Höfling, S., Forchel, A.

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Kalman filtering real-time measurements of H2O isotopologue ratios by laser absorption spectroscopy at 2.73 μm von TAO WU, WEIDONG CHEN, KERSTEL, Erik, FERTEIN, Eric, XIAOMING GAO, KOETH, Johannes, RÖSSNER, Karl, BRÜCKNER, Daniela

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GaInAsSb-AlGaAsSb distributed feedback lasers emitting near 2.4 μm von Hummer, M., Rossner, K., Benkert, A., Forchel, A.

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Tunable lasers on GaSb using the concept of binary superimposed gratings von Müller, M., Lehnhardt, T., Rößner, K., Forchel, A.

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Mid-infrared semiconductor heterostructure lasers for gas sensing applications: From heterostructures to nanostructures von BAUER, A, RÖSSNER, K, LEHNHARDT, T, KAMP, M, HÖFLING, S, WORSCHECH, L, FORCHEL, A

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One dimensional and two dimensional photonic crystal GaInSb∕AlGaAsSb microlasers von Mueller, M., Bauer, A., Lehnhardt, T., Rössner, K., Hümmer, M., Forchel, A.

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Photoreflectance and photoluminescence study of Ga 0.76 In 0.24 Sb / GaSb single quantum wells: Band structure and thermal quenchingof photoluminescence von Motyka, M., Kudrawiec, R., Misiewicz, J., Hümmer, M., Rößner, K., Lehnhardt, T., Müller, M., Forchel, A.

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