BaTiO3 - Blue Phosphorus/WS2 hybrid structure-based surface plasmon resonance biosensor with enhanced sensor performance for rapid bacterial detection von Ishtiak, Khandakar Mohammad, Imam, Safayat-Al, Khosru, Quazi D.M.

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Effect of biomolecule position and fill in factor on sensitivity of a Dielectric Modulated Double Gate Junctionless MOSFET biosensor von Rahman, Ehsanur, Shadman, Abir, Khosru, Quazi D.M.

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Modelling a near perfect temperature tunable multiband VO2 based photonic-plasmonic absorber within visible and near infrared spectra von Imam, Safayat-Al, Ishtiak, Khandakar Mohammad, Khosru, Quazi D.M.

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Monolayer MoS2 and WSe2 Double Gate Field Effect Transistor as Super Nernst pH sensor and Nanobiosensor von Abir Shadman, Ehsanur Rahman, Quazi D.M. Khosru

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Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology von Nakajima, Anri, Khosru, Quazi D.M, Yoshimoto, Takashi, Yokoyama, Shin

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A physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor von Rahman, Ehsanur, Shadman, Abir, Ahmed, Imtiaz, Khan, Saeed Uz Zaman, Khosru, Quazi D M

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High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations von Khosru, Quazi D.M, Nakajima, A, Yoshimoto, T, Yokoyama, S

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Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET von Khan, Md. Irfan, Rahman, I. K. M. Reaz, Khosru, Quazi D. M.

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Graphene-VO2-based-defect-induced tunable multiple narrowband unidirectional photonic terahertz absorber von Imam, Safayat-Al, Ishtiak, Khandakar Mohammad, Khosru, Quazi DM

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Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors von Datta, Kanak, Shadman, Abir, Rahman, Ehsanur, Khosru, Quazi D. M.

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A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT von Rahman, I. K. M. Reaz, Khan, Md. Irfan, Khosru, Quazi D. M.

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Graphene-Based Surface Plasmon Resonance Sensor for Water Salinity Concentration Detection Using Multiple Light Source Techniques von Ishtiak, Khandakar Mohammad, Imam, Safayat-Al, Khosru, Quazi D. M.

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III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10nm technology and beyond von Datta, Kanak, Khosru, Quazi D.M.

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III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond von Datta, Kanak, Khosru, Quazi D.M.

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Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET von Rahman, I. K. M. Reaz, Khan, Md. Irfan, Khosru, Quazi D. M.

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Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET von Rahman, I. K. M. Reaz, Khan, Md. Irfan, Khosru, Quazi D. M.

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A low subthreshold swing tunneling field effect transistor for next generation low power CMOS applications von Chowdhury, Nadim, Ahmed, Imtiaz, Fakhrul, Takian, Alam, M.K., Khosru, Quazi D.M.

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Electronic Properties of MoS2/MX2/MoS2 Trilayer Heterostructures: A First Principle Study von Datta, Kanak, Khosru, Quazi D. M.

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Simulation of thin-TFETs using transition metal dichalcogenides: effect of material parameters, gate dielectric on electrostatic device performance von Datta, Kanak, Khosru, Quazi D. M.

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Physically Based Analytical Modeling of 2D Electrostatic Potential for Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors in Subthreshold Region von Ahmed, Imtiaz, Khosru, Quazi D. M.

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