16-Way Ka-Band Power Combiner Using Novel Waveguide Transitions von Neininger, Philipp, Zink, Martin, John, Laurenz, Friesicke, Christian, Tessmann, Axel, Quay, Rudiger, Zwick, Thomas

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Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs von Doring, Philipp, Krause, Sebastian, Friesicke, Christian, Quay, Rudiger

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Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage von Basler, Michael, Reiner, Richard, Moench, Stefan, Waltereit, Patrick, Quay, Rudiger, Kallfass, Ingmar, Ambacher, Oliver

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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si von Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Quay, Ruediger, Ambacher, Oliver

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RF Performance of Trigate GaN HEMTs von Alsharef, Mohamed, Christiansen, Max, Granzner, Ralf, Ture, Erdin, Quay, Ridiger, Ambacher, Oliver, Schwierz, Frank

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Low-Power Differential Input to Single-Ended Output GaN RF-DAC for RF-Signal Generation von Weis, Markus, Friesicke, Christian, Quay, Rudiger, Ambacher, Oliver

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Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters von Basler, Michael, Mönch, Stefan, Reiner, Richard, Benkhelifa, Fouad, Quay, Rüdiger

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Design, Realization, and Evaluation of a Riemann Pump in GaN Technology von Weiss, Markus, Friesicke, Christian, Metzger, Thomas, Schmidhammer, Edgar, Quay, Rudiger, Ambacher, Oliver

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RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers von Figur, Sascha A., van Raay, Friedbert, Quay, Rüdiger, Lohmiller, Peter, Vietzorreck, Larissa, Ziegler, Volker

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Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride von Leone, Stefano, Ligl, Jana, Manz, Christian, Kirste, Lutz, Fuchs, Theodor, Menner, Hanspeter, Prescher, Mario, Wiegert, Joachim, Žukauskaitė, Agnė, Quay, Ruediger, Ambacher, Oliver

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A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology von Thome, Fabian, Bruckner, Peter, Leone, Stefano, Quay, Rudiger

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Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications von Aidam, Rolf, Diwo, Elke, Godejohann, Birte-Julia, Kirste, Lutz, Quay, Rüdiger, Ambacher, Oliver

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Impact of string connection and contact defects on electrical current distribution in solar cells and modules: A model validated by magnetic field imaging von Tummalieh, Ammar, Mittag, Max, Weber, Julian, Yucebas, Damla, Schäfer, Levin, Quay, Rüdiger, Reichel, Christian, Neuhaus, Holger

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Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition von Streicher, Isabel, Leone, Stefano, Kirste, Lutz, Manz, Christian, Straňák, Patrik, Prescher, Mario, Waltereit, Patrick, Mikulla, Michael, Quay, Rüdiger, Ambacher, Oliver

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The Resistive-Reactive Class-J Power Amplifier Mode von Friesicke, Christian, Quay, Rudiger, Jacob, Arne F.

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Suppression of Iron Memory Effect in GaN Epitaxial Layers von Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Mueller, Stefan, Quay, Ruediger, Stadelmann, Tim

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Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN von Leone, Stefano, Brueckner, Peter, Kirste, Lutz, Doering, Philipp, Fuchs, Theodor, Mueller, Stefan, Prescher, Mario, Quay, Ruediger, Ambacher, Oliver

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(Invited) III-V Integration on Silicon for Resource-Efficient Sensor-Technology von Quay, Ruediger, Leuther, Arnulf, Chartier, Sebastien, John, Laurenz, Tessmann, Axel

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RF-MEMS multi-mode-matching networks for GaN power transistors von Figur, Sascha A., van Raay, Friedbert, Quay, Rüdiger, Vietzorreck, Larissa, Ziegler, Volker

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Enhancement of the Broadband Efficiency of a Class-J Power Amplifier With Varactor-based Dynamic Load Modulation von Amirpour, Raul, Darraji, Ramzi, Ghannouchi, Fadhel, Quay, Ruediger

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