Observation of Molecules Adsorbed on III-V Semiconductor Quantum Dots by Surface-Enhanced Raman Scattering von Quagliano, Lucia G

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Surface enhanced Raman scattering to study surface contaminants on semiconductors von Quagliano, Lucia G.

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Detection of As2O3 arsenic oxide on GaAs surface by Raman scattering von QUAGLIANO, L. G

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Surface-enhanced Raman spectroscopy of silver etched by CrO3H2SO4: Study of adsorbed sulphate von Pagannone, M., Quagliano, L. G., Mattioli, L., Mattei, G.

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Phonons in single thin epitaxial layers of InAs on InP von Quagliano, L.G, Jusserand, B, Orani, D

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Surface-Enhanced Raman Scattering (SERS) on Silver Surfaces Activated by a Simple Chemical Treatment von Mattei, G, Quagliano, L. G, Pagannone, M

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Surface enhanced Raman scattering from molecules adsorbed on semiconductor surfaces von Quagliano, L.G., Jusserand, B., Ladan, F.R., Izrael, A.

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Surface-enhanced raman scattering from molecules adsorbed on GaAs surfaces von Quagliano, Lucia G., Orani, Daniela

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Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers von QUAGLIANO, L. G, NATHER, H

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Raman spectroscopy of adsorbates on semiconductors by means of SERS effect von Quagliano, L. G., Jusserand, B., Ladan, F. R.

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Consistent density determination by Raman and photoluminescence experiments in completely confined e-h plasma in GaAs von Nather, H., Quagliano, L.G.

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Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures von Quagliano, L.G, Sobiesierski, Z, Orani, D, Ricci, A

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Arsenic incorporation in InP epitaxial layers: a Raman scattering study von Quagliano, L.G., Jusserand, B., Mollot, F., Orani, D.

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Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures von Bruni, M.R., Gambacorti, N., Kačiulis, S., Mattogno, G., Simeone, M.G., Quagliano, L.G., Tomassini, N., Jusserand, B.

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Damping of optical phonons in Ga1-xAlxAs alloys von JUSSERAND, B, MOLLOT, F, QUAGLIANO, L. G, LE ROUX, G, PLANEL, R

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Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy von Quagliano, Lucia G., Sobiesierski, Zbig

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SERS spectroscopy to study adsorbates on semiconductor surfaces von Quagliano, Lucia G., Jusserand, Bernard, Orani, Daniela

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High-excitation luminescence in direct-GAP GaAs1-xPx: E-H plasma expansion effects von Modesti, S., Quagliano, L.G., Frova, A., Staehli, J.-L., Guzzi, M.

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The e-h plasma in direct-gap GaAlas under 3-d confinement von Capizzi, M., Frova, A., Martelli, F., Modesti, S., Quagliano, L.G., Staehli, J.-L., Guzzi, M., Logan, R.A., Chiaretti, G.

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Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E von Quagliano, Lucia G., Simeone, M.Gabriella, Bruni, M.Rita, Gambacorti, Narciso, Zugarini, Marco

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