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An area model for on-chip memories and its application von Mulder, J.M., Quach, N.T., Flynn, M.J.

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Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications von Yeong-Chang Chou, Yang, J.M., Lin, C.H., Lee, J., Lange, M., Tsai, R., Nam, P., Nishimoto, M., Gutierrez, A., Quach, H., Lai, R., Farkas, D., Wojtowicz, M., Chin, P., Barsky, M., Oki, A., Boos, J.B., Bennett, B.R.

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X-band low noise amplifier using SiGe BiCMOS technology von Patel, V.J., Axtell, H.S., Cerny, C.L., Creech, G.L., Drangmeister, R.G., Gouker, M.A., James, T.L., Mattamana, A.G., Mbuko, I.O., Neidhard, R.A., Nykiel, E.B., Orlando, P.L., Selke, D.L., Wiedemann, J.M., Quach, T.K.

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The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications von Chou, Y.C., Lee, L.J., Yang, J.M., Lange, M.D., Nam, P.S., Lin, C.H., Quach, H., Gutierrez, A.L., Barsky, M.E., Wojtowicz, M., Oki, A.K., Block, T.R., Boos, J.B., Bennett, B.R., Papanicolaou, N.A.

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