65-, 45-, and 32-nm Aluminium and Copper Transmission-Line Model at Millimeter-Wave Frequencies von Quémerais, Thomas, Moquillon, Laurence, Fournier, Jean-Michel, Benech, Philippe

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A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm von Bossuet, Alice, Quemerais, Thomas, Gaquiere, Christophe, Lauga-Larroze, Estelle, Fournier, Jean-Michel, Lepilliet, Sylvie, Gloria, Daniel

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Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325 GHz von Deng, Marina, Quémerais, Thomas, Bouvot, Simon, Gloria, Daniel, Chevalier, Pascal, Lepilliet, Sylvie, Danneville, Francois, Dambrine, Gilles

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Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier von Quémerais, Thomas, Moquillon, Laurence, Huard, Vincent, Fournier, Jean-Michel, Benech, Philippe, Corrao, Nicolas, Mescot, Xavier

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Fully Integrated Interferometry-Based Reflectometer for High-Impedance Instrumentation von Maris Ferreira, Pietro, Donche, Cora, Avignon-Meseldzija, Emilie, Quemerais, Thomas, Gianesello, Frederic, Gloria, Daniel, Lasri, Tuami, Dambrine, Gilles, Gaquiere, Christophe

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Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process von Quemerais, Thomas, Moquillon, L., Fournier, J., Benech, P., Huard, V.

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Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130-170 GHz Range von Deng, Marina, Poulain, Laurent, Gloria, Daniel, Quemerais, Thomas, Chevalier, Pascal, Lepilliet, Sylvie, Danneville, Francois, Dambrine, Gilles

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CMOS 45-nm 3D metal-oxide-metal capacitors for millimeter wave applications von Quémerais, Thomas, Moquillon, Laurence, Benech, Philippe, Fournier, Jean-Michel, Pruvost, Sébastien

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CMOS and BiCMOS Technologies von Ferrari, Philippe

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Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz von Deng, Marina, Quémerais, Thomas, Bouvot, Simon, Gloria, Daniel, Chevalier, Pascal, Lépilliet, Sylvie, Danneville, François, Dambrine, Gilles

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Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer von Maris Ferreira, Pietro, Donche, Cora, Delalin, Ambroise, Quemerais, Thomas, Gloria, Daniel, Lasri, Tuami, Dambrine, Gilles, Gaquiere, Christophe

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High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI von Quemerais, Thomas, Gloria, Daniel, Golanski, Dominique, Bouvot, Simon

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Sub-fF 130 nm MOS Varactor Characterization using 6 . 8 GHz Interferometry-based Reflectometer von Maris Ferreira, Pietro, Donche, Cora, Delalin, Ambroise, Quémerais, Thomas, Gloria, Daniel, Lasri, Tuami, Dambrine, Gilles, Gaquière, Christophe

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The Space Weather & Ultraviolet Solar Variability Microsatellite Mission (SWUSV) von Dame, Luc

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Design-in reliability approach for Hot Carrier injection modeling in the context of AMS/RF applications von Huard, V, Quemerais, T, Cacho, F, Moquillon, L, Haendler, S, Federspiel, X

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High frequency attenuator von Bossuet Alice, Gloria Daniel, Quemerais Thomas

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In-situ noise system measurement for SiGe HBT characterization at 150 GHz von Bouvot, Simon, Gonçalves Azevedo, Joao Carlos, Quémerais, Thomas, Gloria, Daniel

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HIGH FREQUENCY ATTENUATOR von GLORIA DANIEL, BOSSUET ALICE, QUEMERAIS THOMAS

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Variable impedance device von DEBROUCKE ROMAIN, GLORIA DANIEL, QUEMERAIS THOMAS

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Variable Impedance Device von DEBROUCKE ROMAIN, GLORIA DANIEL, QUEMERAIS THOMAS

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