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  1. 1
    Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories

    Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories von Sakaia, S., Takahashia, M., Takeuchib, K., Qiu-Hong Lia, Horiuchia, T., Shouyu Wanga, Kwi-Young Yuna, Takamiyac, M., Sakuraic, T.


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  2. 2
    Characterization of dual-target co-sputtered novel Hf-doped ZnSnO semiconductors and the enhanced stability of its associated thin film transistors

    Characterization of dual-target co-sputtered novel Hf-doped ZnSnO semiconductors and the enhanced stability of its associated thin film transistors von Huang, Chuan-Xin, Li, Jun, Fu, Yi-Zhou, Zhang, Jian-Hua, Jiang, Xue-Yin, Zhang, Zhi-Lin, Yang, Qiu-Hong

    Veröffentlicht in Journal of alloys and compounds

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