Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures von Ambacher, O., Christian, B., Yassine, M., Baeumler, M., Leone, S., Quay, R.

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High-temperature modeling of AlGaN/GaN HEMTs von Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.

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Voltage-margin limiting mechanisms of AlScN-based HEMTs von Döring, P., Krause, S., Waltereit, P., Brückner, P., Leone, S., Streicher, I., Mikulla, M., Quay, R.

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Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers von Neininger, Philipp, John, L., Zink, M., Meder, D., Kuri, M., Tessmann, A., Friesicke, C., Mikulla, M., Quay, R., Zwick, Thomas

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Gas sorption, diffusion, and permeation in thermally rearranged poly(benzoxazole-co-imide) membranes von Kim, Seungju, Woo, Kyung Taek, Lee, Jong Myeong, Quay, Jeffrey R., Keith Murphy, M., Lee, Young Moo

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Anticipatory modeling for water supply sustainability in Phoenix, Arizona von Sampson, D.A., Quay, R., White, D.D.

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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs von Wespel, M., Polyakov, V. M., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

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Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies von Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.

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GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE von Lim, T, Aidam, R, Waltereit, P, Henkel, T, Quay, R, Lozar, R, Maier, T, Kirste, L, Ambacher, O

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz von Haifeng Sun, Alt, A.R., Benedickter, H., Bolognesi, C.R., Feltin, E., Carlin, J.-F., Gonschorek, M., Grandjean, N., Maier, T., Quay, R.

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Thermally Rearranged Poly(benzoxazole-co-imide) Membranes with Superior Mechanical Strength for Gas Separation Obtained by Tuning Chain Rigidity von Jo, Hye Jin, Soo, Chye Yang, Dong, Guangxi, Do, Yu Seong, Wang, Ho Hyun, Lee, Moon Joo, Quay, Jeffery R, Murphy, M. Keith, Lee, Young Moo

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Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors von Lim, T., Aidam, R., Kirste, L., Waltereit, P., Quay, R., Müller, S., Ambacher, O.

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Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors von Gütle, F, Polyakov, V M, Baeumler, M, Benkhelifa, F, Müller, S, Dammann, M, Cäsar, M, Quay, R, Mikulla, M, Wagner, J, Ambacher, O

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High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier von Carrubba, V., Maroldt, S., Musser, M., Ture, E., Dammann, M., van Raay, F., Quay, R., Bruckner, P., Ambacher, O.

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A Systematic State-Space Approach to Large-Signal Transistor Modeling von Seelmann-Eggebert, M., Merkle, T., van Raay, F., Quay, R., Schlechtweg, M.

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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures von Waltereit, P., Bronner, W., Musser, M., Raay, F. van, Dammann, M., Cäsar, M., Müller, S., Kirste, L., Köhler, K., Quay, R., Mikulla, M., Ambacher, O.

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Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices von Wespel, M., Baeumler, M., Polyakov, V., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.

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Development of a high transconductance GaN MMIC technology for millimeter wave applications von Haupt, C., Maroldt, S., Quay, R., Pletschen, W., Leuther, A., Ambacher, O.

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GaN HEMTs and MMICs for space applications von Waltereit, P, Bronner, W, Quay, R, Dammann, M, Cäsar, M, Müller, S, Reiner, R, Brückner, P, Kiefer, R, van Raay, F, Kühn, J, Musser, M, Haupt, C, Mikulla, M, Ambacher, O

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The state of the art in beyond 5G distributed massive multiple-input multiple-output communication system solutions von Meyer, E., Kruglov, D., Krivic, M., Tanveer, M., Argaez-Ramirez, R., Zhang, Y., Briseno Ojeda, A., Smirnova, K., Alekseev, K., Safari Mugisho, M., Cimbili, B., Farid, N., Dang, Y., Shahid, M., Ensan, M., Banar, J., Bao, H., Matters-Kammerer, M., Gustavsson, U., Demuynck, F., Zwick, T., Acar, M., Fager, C., van der Heijden, M., Ivashina, M., Caratelli, D., Hasselblad, M., Ulusoy, C., Smolders, A.B., Eriksson, K., Johannson, M., Maaskant, R., Quay, R., Floriot, D., Bao, M., Bronckers, L.A., Fridén, J., van Beurden, M.C., de Hon, B.P., Kolitsidas, C., Blanco, D., Willems, F.M.J., Eriksson, T., Filippi, A., Ponzini, F., Johannsen, U.

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