Microwave induction type electric power safety alarm device von DENG ANPING, ZHU QINGFENG, PAN GUANGQIANG, QUAN SHENGBAI, LI MINZHE, WU ZHENGRONG, YANG SHANGLIN, ZHANG MENGXUAN, ZHOU ZESONG, YANG LINGLING, ZOU BINGYANG, ZHAO ZHIPING, LIU SONG, XU KE, XIAO DI, ZHOU ZHIYONG

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Method for measuring micropower wireless carrier parameters based on frequency shift filtering algorithm von ZHANG JUNHAO, QUAN SHENGBAI, ZENG QINGBO, JIANG YOUQUAN, BU QIANJIANG, HUO TING, LUO XUAN, WEN HE, SUN GUANG

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Chemotherapeutic drugs-induced pyroptosis mediated by gasdermin E promotes the progression and chemoresistance of pancreatic cancer von Li, Shumin, Yue, Ming, Xu, Haiyan, Zhang, Xiaofei, Mao, Tiebo, Quan, Ming, Ma, Jingyu, Wang, Yanling, Ge, Weiyu, Wang, Yongchao, Xue, Shengbai, Shentu, Daiyuan, Cui, Jiujie, Wang, Liwei

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Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study von Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Xie, Sheng-Yi, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer von Xie, Sheng-Yi, Li, Xian-Bin, Tian, Wei Quan, Chen, Nian-Ke, Zhang, Xu-Lin, Wang, Yeliang, Zhang, Shengbai, Sun, Hong-Bo

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Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy von Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice von Xie, Sheng-Yi, Li, Xian-Bin, Tian, Wei Quan, Chen, Nian-Ke, Wang, Yeliang, Zhang, Shengbai, Sun, Hong-Bo

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Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation von Wang, Dan, Han, Dong, Li, Xian-Bin, Xie, Sheng-Yi, Chen, Nian-Ke, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy von Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy von Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport von Wang, Dan, Han, Dong, West, Damien, Chen, Nian-Ke, Xie, Sheng-Yi, Tian, Wei Quan, Meunier, Vincent, Zhang, Shengbai, Li, Xian-Bin

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Erratum to "Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study" [Jan 18 140-146] von Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Xie, Sheng-Yi, Tian, Wei Quan, Zhang, Shengbai, Sun, Hong-Bo

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A novel two-dimensional MgB 6 crystal: metal-layer stabilized boron kagome lattice von Xie, Sheng-Yi, Li, Xian-Bin, Tian, Wei Quan, Chen, Nian-Ke, Wang, Yeliang, Zhang, Shengbai, Sun, Hong-Bo

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A novel two-dimensional MgB sub(6) crystal: metal-layer stabilized boron kagome lattice von Xie, Sheng-Yi, Li, Xian-Bin, Tian, Wei Quan, Chen, Nian-Ke, Wang, Yeliang, Zhang, Shengbai, Sun, Hong-Bo

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